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IPG20N06S4L11ATMA2

IPG20N06S4L11ATMA2 Infineon Technologies

Infineon-IPG20N06S4L_11-DS-v01_00-en.pdf?fileId=db3a30432ba3fa6f012bbf66f8b06c1e Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 60V 20A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 65W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4020pF @ 25V
Rds On (Max) @ Id, Vgs: 11.2mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 28µA
Supplier Device Package: PG-TDSON-8-10
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 40000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5000+1.21 EUR
10000+ 1.17 EUR
Mindestbestellmenge: 5000
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Technische Details IPG20N06S4L11ATMA2 Infineon Technologies

Description: MOSFET 2N-CH 60V 20A 8TDSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Wettable Flank, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 65W (Tc), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 4020pF @ 25V, Rds On (Max) @ Id, Vgs: 11.2mOhm @ 17A, 10V, Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.2V @ 28µA, Supplier Device Package: PG-TDSON-8-10, Grade: Automotive, Part Status: Active, Qualification: AEC-Q101.

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IPG20N06S4L11ATMA2 IPG20N06S4L11ATMA2 Hersteller : Infineon Technologies Infineon_IPG20N06S4L_11_DS_v01_00_en-1622262.pdf MOSFET MOSFET_)40V 60V)
auf Bestellung 5040 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+2.75 EUR
10+ 2.29 EUR
100+ 1.81 EUR
250+ 1.67 EUR
500+ 1.53 EUR
1000+ 1.31 EUR
2500+ 1.24 EUR
Mindestbestellmenge: 2
IPG20N06S4L11ATMA2 IPG20N06S4L11ATMA2 Hersteller : Infineon Technologies Infineon-IPG20N06S4L_11-DS-v01_00-en.pdf?fileId=db3a30432ba3fa6f012bbf66f8b06c1e Description: MOSFET 2N-CH 60V 20A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 65W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4020pF @ 25V
Rds On (Max) @ Id, Vgs: 11.2mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 28µA
Supplier Device Package: PG-TDSON-8-10
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 42089 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
7+2.78 EUR
10+ 2.31 EUR
100+ 1.84 EUR
500+ 1.56 EUR
1000+ 1.32 EUR
2000+ 1.25 EUR
Mindestbestellmenge: 7
IPG20N06S4L11ATMA2 Hersteller : Infineon Technologies ipg20n06s4l-11_ds_1_0.pdf SP001404020
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