auf Bestellung 2597 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 1.76 EUR |
| 10+ | 1.55 EUR |
| 100+ | 1.33 EUR |
| 250+ | 1.32 EUR |
| 500+ | 1.21 EUR |
| 1000+ | 1.1 EUR |
| 2500+ | 1.09 EUR |
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Technische Details IPG20N06S4L14AATMA1 Infineon Technologies
Description: MOSFET 2N-CH 60V 20A 8TDSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Wettable Flank, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 50W, Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 20A, Input Capacitance (Ciss) (Max) @ Vds: 2890pF @ 25V, Rds On (Max) @ Id, Vgs: 13.7mOhm @ 17A, 10V, Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.2V @ 20µA, Supplier Device Package: PG-TDSON-8-10, Grade: Automotive, Part Status: Active, Qualification: AEC-Q101.
Weitere Produktangebote IPG20N06S4L14AATMA1
| Foto | Bezeichnung | Hersteller | Beschreibung |
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IPG20N06S4L14AATMA1 | Hersteller : Infineon Technologies |
 Description: MOSFET 2N-CH 60V 20A 8TDSONPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 50W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 20A Input Capacitance (Ciss) (Max) @ Vds: 2890pF @ 25V Rds On (Max) @ Id, Vgs: 13.7mOhm @ 17A, 10V Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.2V @ 20µA Supplier Device Package: PG-TDSON-8-10 Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
auf Bestellung 31287 Stücke: Lieferzeit 10-14 Tag (e) |
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IPG20N06S4L14AATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET 2N-CH 60V 20A 8TDSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 50W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 20A Input Capacitance (Ciss) (Max) @ Vds: 2890pF @ 25V Rds On (Max) @ Id, Vgs: 13.7mOhm @ 17A, 10V Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.2V @ 20µA Supplier Device Package: PG-TDSON-8-10 Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
auf Bestellung 30000 Stücke: Lieferzeit 10-14 Tag (e) |
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IPG20N06S4L14AATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 60V 20A Automotive 8-Pin TDSON EP T/R |
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