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IPG20N06S4L26ATMA1 Infineon Technologies


Infineon-IPG20N06S4L_26-DS-v01_00-en.pdf?fileId=db3a30432ba3fa6f012bbf68dd216c28&ack=t
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 60V 20A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 33W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 1430pF @ 25V
Rds On (Max) @ Id, Vgs: 26mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 10µA
Supplier Device Package: PG-TDSON-8-4
Part Status: Active
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
5000+0.69 EUR
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details IPG20N06S4L26ATMA1 Infineon Technologies

Description: MOSFET 2N-CH 60V 20A 8TDSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 33W, Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 20A, Input Capacitance (Ciss) (Max) @ Vds: 1430pF @ 25V, Rds On (Max) @ Id, Vgs: 26mOhm @ 17A, 10V, Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.2V @ 10µA, Supplier Device Package: PG-TDSON-8-4, Part Status: Active.

Weitere Produktangebote IPG20N06S4L26ATMA1 nach Preis ab 0.69 EUR bis 2.71 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Preis
IPG20N06S4L26ATMA1 IPG20N06S4L26ATMA1 Infineon Technologies Infineon_IPG20N06S4L_26_DS_v01_00_en.pdf MOSFETs N-Ch 60V 20A TDSON-8 OptiMOS-T2
auf Bestellung 5526 Stücke:
Lieferzeit 10-14 Tag (e)
2+2.48 EUR
10+1.53 EUR
100+1.05 EUR
500+0.83 EUR
1000+0.74 EUR
5000+0.69 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPG20N06S4L26ATMA1 IPG20N06S4L26ATMA1 Infineon Technologies Infineon-IPG20N06S4L_26-DS-v01_00-en.pdf?fileId=db3a30432ba3fa6f012bbf68dd216c28&ack=t Description: MOSFET 2N-CH 60V 20A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 33W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 1430pF @ 25V
Rds On (Max) @ Id, Vgs: 26mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 10µA
Supplier Device Package: PG-TDSON-8-4
Part Status: Active
auf Bestellung 9501 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.71 EUR
11+1.72 EUR
100+1.15 EUR
500+0.91 EUR
1000+0.83 EUR
2000+0.76 EUR
Mindestbestellmenge: 7 Stücke
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IPG20N06S4L26ATMA1 Infineon Infineon-IPG20N06S4L_26-DS-v01_00-en.pdf?fileId=db3a30432ba3fa6f012bbf68dd216c28&ack=t
auf Bestellung 10000 Stücke:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
IPG20N06S4L26ATMA1 Infineon_IPG20N06S4L_26_DS_v01_00_en.pdf
Hersteller: Infineon Technologies
MOSFETs N-Ch 60V 20A TDSON-8 OptiMOS-T2
auf Bestellung 5526 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2+2.48 EUR
10+1.53 EUR
100+1.05 EUR
500+0.83 EUR
1000+0.74 EUR
5000+0.69 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPG20N06S4L26ATMA1 Infineon-IPG20N06S4L_26-DS-v01_00-en.pdf?fileId=db3a30432ba3fa6f012bbf68dd216c28&ack=t
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 60V 20A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 33W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 1430pF @ 25V
Rds On (Max) @ Id, Vgs: 26mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 10µA
Supplier Device Package: PG-TDSON-8-4
Part Status: Active
auf Bestellung 9501 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
7+2.71 EUR
11+1.72 EUR
100+1.15 EUR
500+0.91 EUR
1000+0.83 EUR
2000+0.76 EUR
Mindestbestellmenge: 7 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPG20N06S4L26ATMA1 Infineon-IPG20N06S4L_26-DS-v01_00-en.pdf?fileId=db3a30432ba3fa6f012bbf68dd216c28&ack=t
Hersteller: Infineon
auf Bestellung 10000 Stücke:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH