IPI024N06N3GXKSA1 Infineon Technologies
auf Bestellung 23500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 500+ | 2.27 EUR |
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Technische Details IPI024N06N3GXKSA1 Infineon Technologies
Description: MOSFET N-CH 60V 120A TO262-3, Packaging: Tube, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V, Power Dissipation (Max): 250W (Tc), Vgs(th) (Max) @ Id: 4V @ 196µA, Supplier Device Package: PG-TO262-3-1, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 275 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 23000 pF @ 30 V.
Weitere Produktangebote IPI024N06N3GXKSA1 nach Preis ab 2.46 EUR bis 3.08 EUR
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IPI024N06N3GXKSA1 | Hersteller : Infineon Technologies |
 MOSFETs N-Ch 60V 120A I2PAK-3 |
auf Bestellung 10 Stücke: Lieferzeit 10-14 Tag (e) |
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IPI024N06N3GXKSA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 60V 120A 3-Pin(3+Tab) TO-262 Tube |
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IPI024N06N3GXKSA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 60V 120A 3-Pin(3+Tab) TO-262 Tube |
Produkt ist nicht verfügbar |
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IPI024N06N3GXKSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 250W; PG-TO262-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 120A Power dissipation: 250W Case: PG-TO262-3 Gate-source voltage: ±20V On-state resistance: 2.4mΩ Mounting: THT Kind of channel: enhancement Technology: OptiMOS™ 3 Anzahl je Verpackung: 1 Stücke |
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IPI024N06N3GXKSA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 60V 120A TO262-3 Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 4V @ 196µA Supplier Device Package: PG-TO262-3-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 275 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 23000 pF @ 30 V |
Produkt ist nicht verfügbar |
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IPI024N06N3GXKSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 250W; PG-TO262-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 120A Power dissipation: 250W Case: PG-TO262-3 Gate-source voltage: ±20V On-state resistance: 2.4mΩ Mounting: THT Kind of channel: enhancement Technology: OptiMOS™ 3 |
Produkt ist nicht verfügbar |