IPI030N10N3GXKSA1 Infineon Technologies
auf Bestellung 14 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 13.06 EUR |
| 10+ | 11.76 EUR |
| 100+ | 9.61 EUR |
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Technische Details IPI030N10N3GXKSA1 Infineon Technologies
Description: MOSFET N-CH 100V 100A TO262-3, Packaging: Tube, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 3mOhm @ 100A, 10V, Power Dissipation (Max): 300W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 275µA, Supplier Device Package: PG-TO262-3, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 14800 pF @ 50 V.
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IPI030N10N3GXKSA1 | Hersteller : Infineon Technologies |
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IPI030N10N3GXKSA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 100V 100A TO262-3 Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 100A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 275µA Supplier Device Package: PG-TO262-3 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14800 pF @ 50 V |
Produkt ist nicht verfügbar |