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IPI040N06N3GXKSA1

IPI040N06N3GXKSA1 INFINEON TECHNOLOGIES


pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A6995DAD3FBCA11C&compId=IPI040N06N3G-DTE.pdf?ci_sign=5d0fdb2ae18e41775c6c36dcfad7d25cc4ee6d30 Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 90A; 188W; PG-TO262-3
Type of transistor: N-MOSFET
Case: PG-TO262-3
Drain-source voltage: 60V
Drain current: 90A
On-state resistance: 4mΩ
Power dissipation: 188W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Anzahl je Verpackung: 1 Stücke
auf Bestellung 463 Stücke:

Lieferzeit 7-14 Tag (e)
Anzahl Preis
49+1.47 EUR
55+1.30 EUR
62+1.16 EUR
72+1.00 EUR
76+0.94 EUR
Mindestbestellmenge: 49
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details IPI040N06N3GXKSA1 INFINEON TECHNOLOGIES

Description: MOSFET N-CH 60V 90A TO262-3, Packaging: Tube, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 90A (Tc), Rds On (Max) @ Id, Vgs: 4mOhm @ 90A, 10V, Power Dissipation (Max): 188W (Tc), Vgs(th) (Max) @ Id: 4V @ 90µA, Supplier Device Package: PG-TO262-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 30 V.

Weitere Produktangebote IPI040N06N3GXKSA1 nach Preis ab 0.94 EUR bis 4.72 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
IPI040N06N3GXKSA1 IPI040N06N3GXKSA1 Hersteller : INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A6995DAD3FBCA11C&compId=IPI040N06N3G-DTE.pdf?ci_sign=5d0fdb2ae18e41775c6c36dcfad7d25cc4ee6d30 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 90A; 188W; PG-TO262-3
Type of transistor: N-MOSFET
Case: PG-TO262-3
Drain-source voltage: 60V
Drain current: 90A
On-state resistance: 4mΩ
Power dissipation: 188W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
auf Bestellung 463 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
49+1.47 EUR
55+1.30 EUR
62+1.16 EUR
72+1.00 EUR
76+0.94 EUR
Mindestbestellmenge: 49
Im Einkaufswagen  Stück im Wert von  UAH
IPI040N06N3GXKSA1 IPI040N06N3GXKSA1 Hersteller : Infineon Technologies Infineon_IPI040N06N3_G_DS_v02_01_EN-3362814.pdf MOSFETs N-Ch 60V 90A I2PAK-3
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+4.72 EUR
10+3.10 EUR
100+2.16 EUR
500+1.72 EUR
1000+1.69 EUR
2500+1.67 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IPI040N06N3GXKSA1 IPI040N06N3GXKSA1 Hersteller : Infineon Technologies ipb037n06n3g_rev1.01.pdf Trans MOSFET N-CH 60V 90A 3-Pin(3+Tab) TO-262 Tube
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
IPI040N06N3GXKSA1 IPI040N06N3GXKSA1 Hersteller : Infineon Technologies ipb037n06n3g_rev1.01.pdf Trans MOSFET N-CH 60V 90A 3-Pin(3+Tab) TO-262 Tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPI040N06N3GXKSA1 IPI040N06N3GXKSA1 Hersteller : Infineon Technologies Description: MOSFET N-CH 60V 90A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 90A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TO262-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 30 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH