IPI040N06N3GXKSA1 INFINEON TECHNOLOGIES
Hersteller: INFINEON TECHNOLOGIESCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 90A; 188W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 90A
Power dissipation: 188W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: THT
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 483 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 49+ | 1.47 EUR |
| 55+ | 1.3 EUR |
| 62+ | 1.16 EUR |
| 66+ | 1.09 EUR |
| 70+ | 1.03 EUR |
| 250+ | 0.99 EUR |
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Technische Details IPI040N06N3GXKSA1 INFINEON TECHNOLOGIES
Description: MOSFET N-CH 60V 90A TO262-3, Packaging: Tube, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 90A (Tc), Rds On (Max) @ Id, Vgs: 4mOhm @ 90A, 10V, Power Dissipation (Max): 188W (Tc), Vgs(th) (Max) @ Id: 4V @ 90µA, Supplier Device Package: PG-TO262-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 30 V.
Weitere Produktangebote IPI040N06N3GXKSA1 nach Preis ab 0.99 EUR bis 5.25 EUR
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IPI040N06N3GXKSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 90A; 188W; PG-TO262-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 60V Drain current: 90A Power dissipation: 188W Case: PG-TO262-3 Gate-source voltage: ±20V On-state resistance: 4mΩ Mounting: THT Kind of channel: enhanced |
auf Bestellung 483 Stücke: Lieferzeit 14-21 Tag (e) |
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IPI040N06N3GXKSA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 60V 90A TO262-3 Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 90A, 10V Power Dissipation (Max): 188W (Tc) Vgs(th) (Max) @ Id: 4V @ 90µA Supplier Device Package: PG-TO262-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 30 V |
auf Bestellung 500 Stücke: Lieferzeit 10-14 Tag (e) |
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IPI040N06N3GXKSA1 | Hersteller : Infineon Technologies |
MOSFET N-Ch 60V 90A I2PAK-3 |
auf Bestellung 500 Stücke: Lieferzeit 14-28 Tag (e) |
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IPI040N06N3GXKSA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 60V 90A 3-Pin(3+Tab) TO-262 Tube |
auf Bestellung 500 Stücke: Lieferzeit 14-21 Tag (e) |
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IPI040N06N3GXKSA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 60V 90A 3-Pin(3+Tab) TO-262 Tube |
Produkt ist nicht verfügbar |