IPI040N06N3GXKSA1 Infineon Technologies
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 4.72 EUR |
| 10+ | 3.1 EUR |
| 100+ | 2.16 EUR |
| 500+ | 1.72 EUR |
| 1000+ | 1.69 EUR |
| 2500+ | 1.67 EUR |
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Technische Details IPI040N06N3GXKSA1 Infineon Technologies
Description: MOSFET N-CH 60V 90A TO262-3, Packaging: Tube, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 90A (Tc), Rds On (Max) @ Id, Vgs: 4mOhm @ 90A, 10V, Power Dissipation (Max): 188W (Tc), Vgs(th) (Max) @ Id: 4V @ 90µA, Supplier Device Package: PG-TO262-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 30 V.
Weitere Produktangebote IPI040N06N3GXKSA1 nach Preis ab 0.94 EUR bis 1.54 EUR
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IPI040N06N3GXKSA1 | Hersteller : Infineon Technologies |
 Trans MOSFET N-CH 60V 90A 3-Pin(3+Tab) TO-262 Tube |
auf Bestellung 500 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPI040N06N3GXKSA1 | Hersteller : INFINEON TECHNOLOGIES | IPI040N06N3GXKSA1 THT N channel transistors |
auf Bestellung 243 Stücke: Lieferzeit 7-14 Tag (e) |
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IPI040N06N3GXKSA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 60V 90A 3-Pin(3+Tab) TO-262 Tube |
Produkt ist nicht verfügbar |
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IPI040N06N3GXKSA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 60V 90A TO262-3 Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 90A, 10V Power Dissipation (Max): 188W (Tc) Vgs(th) (Max) @ Id: 4V @ 90µA Supplier Device Package: PG-TO262-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 30 V |
Produkt ist nicht verfügbar |