IPI040N06N3GXKSA1 INFINEON TECHNOLOGIES
Hersteller: INFINEON TECHNOLOGIESCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 90A; 188W; PG-TO262-3
Type of transistor: N-MOSFET
Case: PG-TO262-3
Drain-source voltage: 60V
Drain current: 90A
On-state resistance: 4mΩ
Power dissipation: 188W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Anzahl je Verpackung: 1 Stücke
auf Bestellung 463 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 49+ | 1.47 EUR |
| 55+ | 1.30 EUR |
| 62+ | 1.16 EUR |
| 72+ | 1.00 EUR |
| 76+ | 0.94 EUR |
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Technische Details IPI040N06N3GXKSA1 INFINEON TECHNOLOGIES
Description: MOSFET N-CH 60V 90A TO262-3, Packaging: Tube, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 90A (Tc), Rds On (Max) @ Id, Vgs: 4mOhm @ 90A, 10V, Power Dissipation (Max): 188W (Tc), Vgs(th) (Max) @ Id: 4V @ 90µA, Supplier Device Package: PG-TO262-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 30 V.
Weitere Produktangebote IPI040N06N3GXKSA1 nach Preis ab 0.94 EUR bis 4.72 EUR
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IPI040N06N3GXKSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 90A; 188W; PG-TO262-3 Type of transistor: N-MOSFET Case: PG-TO262-3 Drain-source voltage: 60V Drain current: 90A On-state resistance: 4mΩ Power dissipation: 188W Polarisation: unipolar Technology: OptiMOS™ 3 Kind of channel: enhancement Gate-source voltage: ±20V Mounting: THT |
auf Bestellung 463 Stücke: Lieferzeit 14-21 Tag (e) |
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IPI040N06N3GXKSA1 | Hersteller : Infineon Technologies |
MOSFETs N-Ch 60V 90A I2PAK-3 |
auf Bestellung 500 Stücke: Lieferzeit 10-14 Tag (e) |
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IPI040N06N3GXKSA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 60V 90A 3-Pin(3+Tab) TO-262 Tube |
auf Bestellung 500 Stücke: Lieferzeit 14-21 Tag (e) |
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IPI040N06N3GXKSA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 60V 90A 3-Pin(3+Tab) TO-262 Tube |
Produkt ist nicht verfügbar |
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IPI040N06N3GXKSA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 60V 90A TO262-3 Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 90A, 10V Power Dissipation (Max): 188W (Tc) Vgs(th) (Max) @ Id: 4V @ 90µA Supplier Device Package: PG-TO262-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 30 V |
Produkt ist nicht verfügbar |