IPI040N06N3GXKSA1 Infineon Technologies
| Anzahl | Privatkunde |
|---|---|
| 1+ | 5.62 EUR |
| 10+ | 3.69 EUR |
| 100+ | 2.57 EUR |
| 500+ | 2.05 EUR |
| 1000+ | 2.01 EUR |
| 2500+ | 1.99 EUR |
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Technische Details IPI040N06N3GXKSA1 Infineon Technologies
Description: MOSFET N-CH 60V 90A TO262-3, Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: PG-TO262-3, Vgs(th) (Max) @ Id: 4V @ 90µA, Power Dissipation (Max): 188W (Tc), Rds On (Max) @ Id, Vgs: 4mOhm @ 90A, 10V, Current - Continuous Drain (Id) @ 25°C: 90A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Packaging: Tube.
Weitere Produktangebote IPI040N06N3GXKSA1
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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IPI040N06N3GXKSA1 | INFINEON TECHNOLOGIES |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 90A; 188W; PG-TO262-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 90A Power dissipation: 188W Case: PG-TO262-3 On-state resistance: 4mΩ Mounting: THT Kind of channel: enhancement Technology: OptiMOS™ 3 Gate-source voltage: ±20V |
auf Bestellung 133 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| IPI040N06N3GXKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 90A; 188W; PG-TO262-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 90A
Power dissipation: 188W
Case: PG-TO262-3
On-state resistance: 4mΩ
Mounting: THT
Kind of channel: enhancement
Technology: OptiMOS™ 3
Gate-source voltage: ±20V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 90A; 188W; PG-TO262-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 90A
Power dissipation: 188W
Case: PG-TO262-3
On-state resistance: 4mΩ
Mounting: THT
Kind of channel: enhancement
Technology: OptiMOS™ 3
Gate-source voltage: ±20V
auf Bestellung 133 Stücke:
Lieferzeit 14-21 Tag (e)