IPI041N12N3GAKSA1 Infineon Technologies
auf Bestellung 28500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 500+ | 4.73 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IPI041N12N3GAKSA1 Infineon Technologies
Description: MOSFET N-CH 120V 120A TO262-3, Packaging: Tube, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 4.1mOhm @ 100A, 10V, Power Dissipation (Max): 300W (Tc), Vgs(th) (Max) @ Id: 4V @ 270µA, Supplier Device Package: PG-TO262-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 120 V, Gate Charge (Qg) (Max) @ Vgs: 211 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 13800 pF @ 60 V.
Weitere Produktangebote IPI041N12N3GAKSA1 nach Preis ab 5.78 EUR bis 9.84 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
IPI041N12N3GAKSA1 | Hersteller : Infineon Technologies |
 Trans MOSFET N-CH 120V 120A 3-Pin(3+Tab) TO-262 Tube |
auf Bestellung 430 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||
|
|
IPI041N12N3GAKSA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 120V 120A 3-Pin(3+Tab) TO-262 Tube |
auf Bestellung 430 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||
 |
IPI041N12N3GAKSA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 120V 120A TO262-3 Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 4.1mOhm @ 100A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 270µA Supplier Device Package: PG-TO262-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 120 V Gate Charge (Qg) (Max) @ Vgs: 211 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13800 pF @ 60 V |
auf Bestellung 500 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||
 |
IPI041N12N3GAKSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 120V; 120A; 300W; PG-TO262-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 120V Drain current: 120A Power dissipation: 300W Case: PG-TO262-3 Gate-source voltage: ±20V On-state resistance: 4.1mΩ Mounting: THT Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|||||||||||
 |
IPI041N12N3GAKSA1 | Hersteller : Infineon Technologies |
MOSFET N-Ch 120V 120A I2PAK-3 OptiMOS 3 |
Produkt ist nicht verfügbar |
|||||||||||
|
|
IPI041N12N3GAKSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 120V; 120A; 300W; PG-TO262-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 120V Drain current: 120A Power dissipation: 300W Case: PG-TO262-3 Gate-source voltage: ±20V On-state resistance: 4.1mΩ Mounting: THT Kind of channel: enhanced |
Produkt ist nicht verfügbar |