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IPI041N12N3GAKSA1

IPI041N12N3GAKSA1 Infineon Technologies


6126ipp_i_b041n12n3_rev23.pdffolderiddb3a304313b8b5a60113cee8763b02d7.pdf Hersteller: Infineon Technologies
Trans MOSFET N-CH 120V 120A 3-Pin(3+Tab) TO-262 Tube
auf Bestellung 28500 Stücke:

Lieferzeit 14-21 Tag (e)
Anzahl Preis
500+4.53 EUR
Mindestbestellmenge: 500
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details IPI041N12N3GAKSA1 Infineon Technologies

Description: MOSFET N-CH 120V 120A TO262-3, Packaging: Tube, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 4.1mOhm @ 100A, 10V, Power Dissipation (Max): 300W (Tc), Vgs(th) (Max) @ Id: 4V @ 270µA, Supplier Device Package: PG-TO262-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 120 V, Gate Charge (Qg) (Max) @ Vgs: 211 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 13800 pF @ 60 V.

Weitere Produktangebote IPI041N12N3GAKSA1 nach Preis ab 5.52 EUR bis 9.84 EUR

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IPI041N12N3GAKSA1 IPI041N12N3GAKSA1 Hersteller : Infineon Technologies 6126ipp_i_b041n12n3_rev23.pdffolderiddb3a304313b8b5a60113cee8763b02d7.pdf Trans MOSFET N-CH 120V 120A 3-Pin(3+Tab) TO-262 Tube
auf Bestellung 430 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
17+8.84 EUR
21+7.13 EUR
100+5.52 EUR
Mindestbestellmenge: 17
Im Einkaufswagen  Stück im Wert von  UAH
IPI041N12N3GAKSA1 IPI041N12N3GAKSA1 Hersteller : Infineon Technologies 6126ipp_i_b041n12n3_rev23.pdffolderiddb3a304313b8b5a60113cee8763b02d7.pdf Trans MOSFET N-CH 120V 120A 3-Pin(3+Tab) TO-262 Tube
auf Bestellung 430 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
17+8.84 EUR
21+7.13 EUR
100+5.52 EUR
Mindestbestellmenge: 17
Im Einkaufswagen  Stück im Wert von  UAH
IPI041N12N3GAKSA1 IPI041N12N3GAKSA1 Hersteller : Infineon Technologies IPP_I_B041N12N3_Rev2.2.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432239cccd0122a75b86467ca4 Description: MOSFET N-CH 120V 120A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 270µA
Supplier Device Package: PG-TO262-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 211 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13800 pF @ 60 V
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.84 EUR
10+8.26 EUR
100+6.68 EUR
500+5.94 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IPI041N12N3GAKSA1 IPI041N12N3GAKSA1 Hersteller : INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BC21DBFD4B011C&compId=IPI041N12N3G-DTE.pdf?ci_sign=25bd54334b52dd5ae3f6d525c0226e6d776aae3e Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 120A; 300W; PG-TO262-3
Case: PG-TO262-3
Drain-source voltage: 120V
Drain current: 120A
On-state resistance: 4.1mΩ
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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IPI041N12N3GAKSA1 IPI041N12N3GAKSA1 Hersteller : Infineon Technologies Infineon_IPP_I_B041N12N3_DS_v02_03_en-1227153.pdf MOSFET N-Ch 120V 120A I2PAK-3 OptiMOS 3
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPI041N12N3GAKSA1 IPI041N12N3GAKSA1 Hersteller : INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BC21DBFD4B011C&compId=IPI041N12N3G-DTE.pdf?ci_sign=25bd54334b52dd5ae3f6d525c0226e6d776aae3e Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 120A; 300W; PG-TO262-3
Case: PG-TO262-3
Drain-source voltage: 120V
Drain current: 120A
On-state resistance: 4.1mΩ
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH