Technische Details IPI041N12N3GAKSA1 Infineon Technologies
Description: MOSFET N-CH 120V 120A TO262-3, Packaging: Tube, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 4.1mOhm @ 100A, 10V, Power Dissipation (Max): 300W (Tc), Vgs(th) (Max) @ Id: 4V @ 270µA, Supplier Device Package: PG-TO262-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 120 V, Gate Charge (Qg) (Max) @ Vgs: 211 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 13800 pF @ 60 V.
Weitere Produktangebote IPI041N12N3GAKSA1 nach Preis ab 6.5 EUR bis 11.71 EUR
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IPI041N12N3GAKSA1 | Infineon Technologies |
 Trans MOSFET N-CH 120V 120A 3-Pin(3+Tab) TO-262 Tube |
auf Bestellung 430 Stücke: Lieferzeit 14-21 Tag (e) |
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IPI041N12N3GAKSA1 | Infineon Technologies |
Trans MOSFET N-CH 120V 120A 3-Pin(3+Tab) TO-262 Tube |
auf Bestellung 430 Stücke: Lieferzeit 14-21 Tag (e) |
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IPI041N12N3GAKSA1 | Infineon Technologies |
Description: MOSFET N-CH 120V 120A TO262-3 Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 4.1mOhm @ 100A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 270µA Supplier Device Package: PG-TO262-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 120 V Gate Charge (Qg) (Max) @ Vgs: 211 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13800 pF @ 60 V |
auf Bestellung 500 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPI041N12N3GAKSA1 |
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Hersteller: Infineon Technologies
Trans MOSFET N-CH 120V 120A 3-Pin(3+Tab) TO-262 Tube
Trans MOSFET N-CH 120V 120A 3-Pin(3+Tab) TO-262 Tube
auf Bestellung 430 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 17+ | 10.4 EUR |
| 21+ | 8.39 EUR |
| 100+ | 6.5 EUR |
| IPI041N12N3GAKSA1 |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH 120V 120A 3-Pin(3+Tab) TO-262 Tube
Trans MOSFET N-CH 120V 120A 3-Pin(3+Tab) TO-262 Tube
auf Bestellung 430 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 17+ | 10.4 EUR |
| 21+ | 8.57 EUR |
| 100+ | 6.75 EUR |
| IPI041N12N3GAKSA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 120V 120A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 270µA
Supplier Device Package: PG-TO262-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 211 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13800 pF @ 60 V
Description: MOSFET N-CH 120V 120A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 270µA
Supplier Device Package: PG-TO262-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 211 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13800 pF @ 60 V
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 11.71 EUR |
| 10+ | 9.83 EUR |
| 100+ | 7.95 EUR |
| 500+ | 7.07 EUR |