IPI045N10N3 G Infineon Technologies

Description: N-CHANNEL POWER MOSFET, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Part Status: Active, Supplier Device Package: PG-TO262-3-1, Vgs(th) (Max) @ Id: 3.5V @ 150µA, Power Dissipation (Max): 214W (Tc), Rds On (Max) @ Id, Vgs: 4.5mOhm @ 100A, 10V, Current - Continuous Drain (Id) @ 25°C: 137A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA, Input Capacitance (Ciss) (Max) @ Vds: 8410 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V, Packaging: Bulk.