auf Bestellung 456 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 10.61 EUR |
| 10+ | 7.76 EUR |
| 100+ | 6.28 EUR |
| 500+ | 4.49 EUR |
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Technische Details IPI051N15N5AKSA1 Infineon Technologies
Description: MV POWER MOS, Packaging: Tube, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 5.1mOhm @ 60A, 10V, Power Dissipation (Max): 300W (Tc), Vgs(th) (Max) @ Id: 4.6V @ 264µA, Supplier Device Package: PG-TO262-3-1, Drive Voltage (Max Rds On, Min Rds On): 8V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7800 pF @ 75 V.
Weitere Produktangebote IPI051N15N5AKSA1
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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IPI051N15N5AKSA1 | Hersteller : Infineon Technologies |
 Trans MOSFET N-CH 150V 120A 3-Pin(3+Tab) TO-262 Tube |
Produkt ist nicht verfügbar |
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| IPI051N15N5AKSA1 | Hersteller : Infineon Technologies |
150V N-Channel MOSFET |
Produkt ist nicht verfügbar |
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IPI051N15N5AKSA1 | Hersteller : Infineon Technologies |
Description: MV POWER MOS Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 5.1mOhm @ 60A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4.6V @ 264µA Supplier Device Package: PG-TO262-3-1 Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7800 pF @ 75 V |
Produkt ist nicht verfügbar |