Technische Details IPI075N15N3GXKSA1 Infineon Technologies
Description: MOSFET N-CH 150V 100A TO262-3, Input Capacitance (Ciss) (Max) @ Vds: 5470 pF @ 75 V, Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V, Drain to Source Voltage (Vdss): 150 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 8V, 10V, Part Status: Active, Supplier Device Package: PG-TO262-3, Vgs(th) (Max) @ Id: 4V @ 270µA, Power Dissipation (Max): 300W (Tc), Rds On (Max) @ Id, Vgs: 7.5mOhm @ 100A, 10V, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Packaging: Tube.
Weitere Produktangebote IPI075N15N3GXKSA1 nach Preis ab 4.84 EUR bis 12.35 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||
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IPI075N15N3GXKSA1 | Infineon Technologies |
 Trans MOSFET N-CH 150V 100A 3-Pin(3+Tab) TO-262 Tube |
auf Bestellung 648 Stücke: Lieferzeit 14-21 Tag (e) |
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IPI075N15N3GXKSA1 | Infineon Technologies |
Trans MOSFET N-CH 150V 100A 3-Pin(3+Tab) TO-262 Tube |
auf Bestellung 650 Stücke: Lieferzeit 14-21 Tag (e) |
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IPI075N15N3GXKSA1 | Infineon Technologies |
MOSFETs TRENCH >=100V |
auf Bestellung 426 Stücke: Lieferzeit 10-14 Tag (e) |
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IPI075N15N3GXKSA1 | Infineon Technologies |
Description: MOSFET N-CH 150V 100A TO262-3 Input Capacitance (Ciss) (Max) @ Vds: 5470 pF @ 75 V Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V Drain to Source Voltage (Vdss): 150 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Part Status: Active Supplier Device Package: PG-TO262-3 Vgs(th) (Max) @ Id: 4V @ 270µA Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 100A, 10V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Packaging: Tube |
auf Bestellung 591 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPI075N15N3GXKSA1 |
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Hersteller: Infineon Technologies
Trans MOSFET N-CH 150V 100A 3-Pin(3+Tab) TO-262 Tube
Trans MOSFET N-CH 150V 100A 3-Pin(3+Tab) TO-262 Tube
auf Bestellung 648 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 21+ | 8.41 EUR |
| 24+ | 7.24 EUR |
| 100+ | 5.96 EUR |
| 500+ | 5.26 EUR |
| IPI075N15N3GXKSA1 |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH 150V 100A 3-Pin(3+Tab) TO-262 Tube
Trans MOSFET N-CH 150V 100A 3-Pin(3+Tab) TO-262 Tube
auf Bestellung 650 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 19+ | 9.21 EUR |
| 22+ | 7.76 EUR |
| 100+ | 6.28 EUR |
| 500+ | 5.45 EUR |
| IPI075N15N3GXKSA1 |
|
Hersteller: Infineon Technologies
MOSFETs TRENCH >=100V
MOSFETs TRENCH >=100V
auf Bestellung 426 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 10.5 EUR |
| 10+ | 4.86 EUR |
| 500+ | 4.84 EUR |
| IPI075N15N3GXKSA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 150V 100A TO262-3
Input Capacitance (Ciss) (Max) @ Vds: 5470 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Part Status: Active
Supplier Device Package: PG-TO262-3
Vgs(th) (Max) @ Id: 4V @ 270µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
Description: MOSFET N-CH 150V 100A TO262-3
Input Capacitance (Ciss) (Max) @ Vds: 5470 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Part Status: Active
Supplier Device Package: PG-TO262-3
Vgs(th) (Max) @ Id: 4V @ 270µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
auf Bestellung 591 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 12.35 EUR |
| 50+ | 6.57 EUR |
| 100+ | 6.14 EUR |
| 500+ | 5.2 EUR |