IPI075N15N3GXKSA1 Infineon Technologies
| Anzahl | Privatkunde |
|---|---|
| 500+ | 5.96 EUR |
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Lieferzeit:
14-21 Tag (e)
Mindestmenge:
500 Stücke
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Technische Details IPI075N15N3GXKSA1 Infineon Technologies
Description: MOSFET N-CH 150V 100A TO262-3, Packaging: Tube, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 7.5mOhm @ 100A, 10V, Power Dissipation (Max): 300W (Tc), Vgs(th) (Max) @ Id: 4V @ 270µA, Supplier Device Package: PG-TO262-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 8V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5470 pF @ 75 V.
Weitere Produktangebote IPI075N15N3GXKSA1 nach Preis ab 4.3 EUR bis 10.7 EUR
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IPI075N15N3GXKSA1 | Infineon Technologies |
 Trans MOSFET N-CH 150V 100A 3-Pin(3+Tab) TO-262 Tube |
auf Bestellung 648 Stücke: Lieferzeit 14-21 Tag (e) |
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IPI075N15N3GXKSA1 | Infineon Technologies |
Trans MOSFET N-CH 150V 100A 3-Pin(3+Tab) TO-262 Tube |
auf Bestellung 650 Stücke: Lieferzeit 14-21 Tag (e) |
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IPI075N15N3GXKSA1 | Infineon Technologies |
MOSFETs IFX FET >100-150V |
auf Bestellung 690 Stücke: Lieferzeit 10-14 Tag (e) |
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IPI075N15N3GXKSA1 | Infineon Technologies |
Description: MOSFET N-CH 150V 100A TO262-3 Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 100A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 270µA Supplier Device Package: PG-TO262-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5470 pF @ 75 V |
auf Bestellung 257 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPI075N15N3GXKSA1 |
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Hersteller: Infineon Technologies
Trans MOSFET N-CH 150V 100A 3-Pin(3+Tab) TO-262 Tube
Trans MOSFET N-CH 150V 100A 3-Pin(3+Tab) TO-262 Tube
auf Bestellung 648 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 21+ | 8.6 EUR |
| 24+ | 7.4 EUR |
| 100+ | 6.1 EUR |
| 500+ | 5.38 EUR |
| IPI075N15N3GXKSA1 |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH 150V 100A 3-Pin(3+Tab) TO-262 Tube
Trans MOSFET N-CH 150V 100A 3-Pin(3+Tab) TO-262 Tube
auf Bestellung 650 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 19+ | 9.42 EUR |
| 22+ | 7.94 EUR |
| 100+ | 6.44 EUR |
| 500+ | 5.58 EUR |
| IPI075N15N3GXKSA1 |
|
Hersteller: Infineon Technologies
MOSFETs IFX FET >100-150V
MOSFETs IFX FET >100-150V
auf Bestellung 690 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 10.52 EUR |
| 10+ | 5.51 EUR |
| 100+ | 5.05 EUR |
| 500+ | 4.3 EUR |
| IPI075N15N3GXKSA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 150V 100A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 270µA
Supplier Device Package: PG-TO262-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5470 pF @ 75 V
Description: MOSFET N-CH 150V 100A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 270µA
Supplier Device Package: PG-TO262-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5470 pF @ 75 V
auf Bestellung 257 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 10.7 EUR |
| 10+ | 7.13 EUR |
| 50+ | 5.6 EUR |
| 100+ | 5.11 EUR |