IPI075N15N3GXKSA1 Infineon Technologies
auf Bestellung 394000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 500+ | 5.18 EUR |
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Technische Details IPI075N15N3GXKSA1 Infineon Technologies
Description: MOSFET N-CH 150V 100A TO262-3, Packaging: Tube, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 7.5mOhm @ 100A, 10V, Power Dissipation (Max): 300W (Tc), Vgs(th) (Max) @ Id: 4V @ 270µA, Supplier Device Package: PG-TO262-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 8V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5470 pF @ 75 V.
Weitere Produktangebote IPI075N15N3GXKSA1 nach Preis ab 4.42 EUR bis 11 EUR
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IPI075N15N3GXKSA1 | Hersteller : Infineon Technologies |
 Trans MOSFET N-CH 150V 100A 3-Pin(3+Tab) TO-262 Tube |
auf Bestellung 648 Stücke: Lieferzeit 14-21 Tag (e) |
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IPI075N15N3GXKSA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 150V 100A 3-Pin(3+Tab) TO-262 Tube |
auf Bestellung 650 Stücke: Lieferzeit 14-21 Tag (e) |
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IPI075N15N3GXKSA1 | Hersteller : Infineon Technologies |
MOSFET TRENCH >=100V |
auf Bestellung 207 Stücke: Lieferzeit 10-14 Tag (e) |
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IPI075N15N3GXKSA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 150V 100A TO262-3 Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 100A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 270µA Supplier Device Package: PG-TO262-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5470 pF @ 75 V |
auf Bestellung 498 Stücke: Lieferzeit 10-14 Tag (e) |
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IPI075N15N3GXKSA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 150V 100A Automotive 3-Pin(3+Tab) TO-262 Tube |
auf Bestellung 650 Stücke: Lieferzeit 14-21 Tag (e) |
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IPI075N15N3GXKSA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 150V 100A 3-Pin(3+Tab) TO-262 Tube |
Produkt ist nicht verfügbar |
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IPI075N15N3GXKSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 100A; 300W; PG-TO262-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 150V Drain current: 100A Power dissipation: 300W Case: PG-TO262-3 Gate-source voltage: ±20V On-state resistance: 7.2mΩ Mounting: THT Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IPI075N15N3GXKSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 100A; 300W; PG-TO262-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 150V Drain current: 100A Power dissipation: 300W Case: PG-TO262-3 Gate-source voltage: ±20V On-state resistance: 7.2mΩ Mounting: THT Kind of channel: enhanced |
Produkt ist nicht verfügbar |