IPI100P03P3L-04 Infineon Technologies
Hersteller: Infineon Technologies
Description: MOSFET P-CH 30V 100A TO262-3
Input Capacitance (Ciss) (Max) @ Vds: 9300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +5V, -16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: PG-TO262-3
Vgs(th) (Max) @ Id: 2.1V @ 475µA
Power Dissipation (Max): 200W (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Packaging: Tube
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Technische Details IPI100P03P3L-04 Infineon Technologies
Description: MOSFET P-CH 30V 100A TO262-3, Input Capacitance (Ciss) (Max) @ Vds: 9300 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): +5V, -16V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Obsolete, Supplier Device Package: PG-TO262-3, Vgs(th) (Max) @ Id: 2.1V @ 475µA, Power Dissipation (Max): 200W (Tc), Rds On (Max) @ Id, Vgs: 4.3mOhm @ 80A, 10V, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA, Packaging: Tube.