IPI111N15N3GAKSA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: MOSFET N-CH 150V 83A TO262-3
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Supplier Device Package: PG-TO262-3
Vgs(th) (Max) @ Id: 4V @ 160µA
Power Dissipation (Max): 214W (Tc)
Rds On (Max) @ Id, Vgs: 11.1mOhm @ 83A, 10V
Current - Continuous Drain (Id) @ 25°C: 83A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 3230 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
| Anzahl | Preis |
|---|---|
| 3+ | 8.18 EUR |
| 50+ | 4.29 EUR |
| 100+ | 3.91 EUR |
| 500+ | 3.25 EUR |
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Technische Details IPI111N15N3GAKSA1 Infineon Technologies
Description: MOSFET N-CH 150V 83A TO262-3, Drain to Source Voltage (Vdss): 150 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 8V, 10V, Supplier Device Package: PG-TO262-3, Vgs(th) (Max) @ Id: 4V @ 160µA, Power Dissipation (Max): 214W (Tc), Rds On (Max) @ Id, Vgs: 11.1mOhm @ 83A, 10V, Current - Continuous Drain (Id) @ 25°C: 83A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 3230 pF @ 75 V, Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V.
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| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
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IPI111N15N3GAKSA1 | Infineon Technologies |
MOSFET N-Ch 150V 83A I2PAK-3 |
auf Bestellung 500 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| IPI111N15N3GAKSA1 |
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Hersteller: Infineon Technologies
MOSFET N-Ch 150V 83A I2PAK-3
MOSFET N-Ch 150V 83A I2PAK-3
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)