IPI111N15N3GAKSA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: MOSFET N-CH 150V 83A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 83A (Tc)
Rds On (Max) @ Id, Vgs: 11.1mOhm @ 83A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 4V @ 160µA
Supplier Device Package: PG-TO262-3
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3230 pF @ 75 V
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 8.18 EUR |
| 50+ | 4.29 EUR |
| 100+ | 3.91 EUR |
| 500+ | 3.25 EUR |
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Technische Details IPI111N15N3GAKSA1 Infineon Technologies
Description: MOSFET N-CH 150V 83A TO262-3, Packaging: Tube, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 83A (Tc), Rds On (Max) @ Id, Vgs: 11.1mOhm @ 83A, 10V, Power Dissipation (Max): 214W (Tc), Vgs(th) (Max) @ Id: 4V @ 160µA, Supplier Device Package: PG-TO262-3, Drive Voltage (Max Rds On, Min Rds On): 8V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3230 pF @ 75 V.
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Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 83A; 214W; PG-TO262-3 Case: PG-TO262-3 Mounting: THT Kind of channel: enhancement Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar On-state resistance: 11.1mΩ Gate-source voltage: ±20V Drain current: 83A Drain-source voltage: 150V Power dissipation: 214W |
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