IPI180N10N3GXKSA1 INFINEON TECHNOLOGIES
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 43A; 71W; PG-TO262-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 43A
Power dissipation: 71W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: THT
Kind of channel: enhancement
Technology: OptiMOS™ 3
| Anzahl | Preis |
|---|---|
| 49+ | 1.49 EUR |
| 56+ | 1.29 EUR |
| 70+ | 1.03 EUR |
| 250+ | 0.9 EUR |
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Technische Details IPI180N10N3GXKSA1 INFINEON TECHNOLOGIES
Description: MOSFET N-CH 100V 43A TO262-3, Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Part Status: Not For New Designs, Power Dissipation (Max): 71W (Tc), Rds On (Max) @ Id, Vgs: 18mOhm @ 33A, 10V, Current - Continuous Drain (Id) @ 25°C: 43A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Packaging: Tube, Supplier Device Package: PG-TO262-3, Vgs(th) (Max) @ Id: 3.5V @ 33µA.
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| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
 |
IPI180N10N3GXKSA1 | Infineon Technologies |
Description: MOSFET N-CH 100V 43A TO262-3 Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Not For New Designs Power Dissipation (Max): 71W (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 33A, 10V Current - Continuous Drain (Id) @ 25°C: 43A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Packaging: Tube Supplier Device Package: PG-TO262-3 Vgs(th) (Max) @ Id: 3.5V @ 33µA |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 500 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IPI180N10N3GXKSA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 43A TO262-3
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Not For New Designs
Power Dissipation (Max): 71W (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 33A, 10V
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
Supplier Device Package: PG-TO262-3
Vgs(th) (Max) @ Id: 3.5V @ 33µA
Description: MOSFET N-CH 100V 43A TO262-3
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Not For New Designs
Power Dissipation (Max): 71W (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 33A, 10V
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
Supplier Device Package: PG-TO262-3
Vgs(th) (Max) @ Id: 3.5V @ 33µA
Produkt ist nicht verfügbar
Mindestbestellmenge: 500 Stücke
Im Einkaufswagen
Stück im Wert von UAH