IPI180N10N3GXKSA1 INFINEON TECHNOLOGIES
Hersteller: INFINEON TECHNOLOGIESCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 43A; 71W; PG-TO262-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 43A
Power dissipation: 71W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: THT
Kind of channel: enhancement
Technology: OptiMOS™ 3
Anzahl je Verpackung: 1 Stücke
auf Bestellung 478 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 45+ | 1.60 EUR |
| 52+ | 1.39 EUR |
| 74+ | 0.97 EUR |
| 77+ | 0.93 EUR |
| 1000+ | 0.90 EUR |
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Technische Details IPI180N10N3GXKSA1 INFINEON TECHNOLOGIES
Description: MOSFET N-CH 100V 43A TO262-3, Packaging: Tube, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 43A (Tc), Rds On (Max) @ Id, Vgs: 18mOhm @ 33A, 10V, Power Dissipation (Max): 71W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 33µA, Supplier Device Package: PG-TO262-3, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 50 V.
Weitere Produktangebote IPI180N10N3GXKSA1 nach Preis ab 0.93 EUR bis 1.60 EUR
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IPI180N10N3GXKSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 43A; 71W; PG-TO262-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 43A Power dissipation: 71W Case: PG-TO262-3 Gate-source voltage: ±20V On-state resistance: 18mΩ Mounting: THT Kind of channel: enhancement Technology: OptiMOS™ 3 |
auf Bestellung 478 Stücke: Lieferzeit 14-21 Tag (e) |
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IPI180N10N3GXKSA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 100V 43A Automotive 3-Pin(3+Tab) TO-262 Tube |
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IPI180N10N3GXKSA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 100V 43A TO262-3 Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 43A (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 33A, 10V Power Dissipation (Max): 71W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 33µA Supplier Device Package: PG-TO262-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 50 V |
Produkt ist nicht verfügbar |