IPI45N06S3L-13 Infineon Technologies
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 45A TO262-3
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: PG-TO262-3
Vgs(th) (Max) @ Id: 2.2V @ 30µA
Power Dissipation (Max): 65W (Tc)
Rds On (Max) @ Id, Vgs: 13.4mOhm @ 26A, 10V
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Packaging: Tube
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Technische Details IPI45N06S3L-13 Infineon Technologies
Description: MOSFET N-CH 55V 45A TO262-3, Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V, Drain to Source Voltage (Vdss): 55 V, Vgs (Max): ±16V, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Supplier Device Package: PG-TO262-3, Vgs(th) (Max) @ Id: 2.2V @ 30µA, Power Dissipation (Max): 65W (Tc), Rds On (Max) @ Id, Vgs: 13.4mOhm @ 26A, 10V, Current - Continuous Drain (Id) @ 25°C: 45A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA, Packaging: Tube.