IPI600N25N3GAKSA1 Infineon Technologies

Description: MOSFET N-CH 250V 25A TO262-3, Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V, Drain to Source Voltage (Vdss): 250 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: PG-TO262-3, Vgs(th) (Max) @ Id: 4V @ 90µA, Power Dissipation (Max): 136W (Tc), Rds On (Max) @ Id, Vgs: 60mOhm @ 25A, 10V, Current - Continuous Drain (Id) @ 25°C: 25A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Packaging: Tube.