IPI60R190C6XKSA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: MOSFET N-CH 600V 20.2A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 9.5A, 10V
Power Dissipation (Max): 151W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 630µA
Supplier Device Package: PG-TO262-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 100 V
auf Bestellung 495 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 4.65 EUR |
| 50+ | 2.34 EUR |
| 100+ | 2.12 EUR |
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Technische Details IPI60R190C6XKSA1 Infineon Technologies
Description: MOSFET N-CH 600V 20.2A TO262-3, Packaging: Tube, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc), Rds On (Max) @ Id, Vgs: 190mOhm @ 9.5A, 10V, Power Dissipation (Max): 151W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 630µA, Supplier Device Package: PG-TO262-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 100 V.
Weitere Produktangebote IPI60R190C6XKSA1 nach Preis ab 2.82 EUR bis 4.7 EUR
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IPI60R190C6XKSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO262-3 Type of transistor: N-MOSFET Technology: CoolMOS™ C6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 20.2A Power dissipation: 151W Case: PG-TO262-3 Gate-source voltage: ±20V On-state resistance: 0.19Ω Mounting: THT Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 17 Stücke: Lieferzeit 7-14 Tag (e) |
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IPI60R190C6XKSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO262-3 Type of transistor: N-MOSFET Technology: CoolMOS™ C6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 20.2A Power dissipation: 151W Case: PG-TO262-3 Gate-source voltage: ±20V On-state resistance: 0.19Ω Mounting: THT Kind of channel: enhancement |
auf Bestellung 17 Stücke: Lieferzeit 14-21 Tag (e) |
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IPI60R190C6XKSA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 600V 20.2A 3-Pin(3+Tab) TO-262 Tube |
Produkt ist nicht verfügbar |