IPI65R380C6XKSA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: MOSFET N-CH 650V 10.6A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.2A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 320µA
Supplier Device Package: PG-TO262-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 3.91 EUR |
| 50+ | 1.92 EUR |
| 100+ | 1.73 EUR |
| 500+ | 1.39 EUR |
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Technische Details IPI65R380C6XKSA1 Infineon Technologies
Description: MOSFET N-CH 650V 10.6A TO262-3, Packaging: Tube, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc), Rds On (Max) @ Id, Vgs: 380mOhm @ 3.2A, 10V, Power Dissipation (Max): 83W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 320µA, Supplier Device Package: PG-TO262-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V.
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Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 10.6A; 83W; PG-TO262-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 10.6A Power dissipation: 83W Case: PG-TO262-3 Gate-source voltage: ±20V On-state resistance: 0.38Ω Mounting: THT Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
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IPI65R380C6XKSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 10.6A; 83W; PG-TO262-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 10.6A Power dissipation: 83W Case: PG-TO262-3 Gate-source voltage: ±20V On-state resistance: 0.38Ω Mounting: THT Kind of channel: enhancement |
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