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IPI65R380C6XKSA1

IPI65R380C6XKSA1 Infineon Technologies

fundamentals-of-power-semiconductors
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 10.6A TO262-3
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO262-3
Vgs(th) (Max) @ Id: 3.5V @ 320µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
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Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+5.28 EUR
50+2.59 EUR
100+2.33 EUR
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Technische Details IPI65R380C6XKSA1 Infineon Technologies

Description: MOSFET N-CH 650V 10.6A TO262-3, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: PG-TO262-3, Vgs(th) (Max) @ Id: 3.5V @ 320µA, Power Dissipation (Max): 83W (Tc), Rds On (Max) @ Id, Vgs: 380mOhm @ 3.2A, 10V, Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V, Drain to Source Voltage (Vdss): 650 V.

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IPI65R380C6XKSA1 IPI65R380C6XKSA1 INFINEON TECHNOLOGIES IPI65R380C6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10.6A; 83W; PG-TO262-3
Mounting: THT
Case: PG-TO262-3
Power dissipation: 83W
Polarisation: unipolar
Technology: CoolMOS™
Drain current: 10.6A
Kind of channel: enhancement
Drain-source voltage: 650V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPI65R380C6XKSA1 IPI65R380C6-DTE.pdf
IPI65R380C6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10.6A; 83W; PG-TO262-3
Mounting: THT
Case: PG-TO262-3
Power dissipation: 83W
Polarisation: unipolar
Technology: CoolMOS™
Drain current: 10.6A
Kind of channel: enhancement
Drain-source voltage: 650V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH