IPI65R660CFDXKSA1 Infineon Technologies

Description: MOSFET N-CH 650V 6A TO262-3, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: PG-TO262-3, Vgs(th) (Max) @ Id: 4.5V @ 200µA, Power Dissipation (Max): 62.5W (Tc), Rds On (Max) @ Id, Vgs: 660mOhm @ 2.1A, 10V, Current - Continuous Drain (Id) @ 25°C: 6A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 615 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V, Drain to Source Voltage (Vdss): 650 V.