IPI80N06S3-05 Infineon Technologies
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 80A TO262-3
Power Dissipation (Max): 165W (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 63A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 10760 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO262-3
Vgs(th) (Max) @ Id: 4V @ 110µA
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Technische Details IPI80N06S3-05 Infineon Technologies
Description: MOSFET N-CH 55V 80A TO262-3, Power Dissipation (Max): 165W (Tc), Rds On (Max) @ Id, Vgs: 5.4mOhm @ 63A, 10V, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 10760 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V, Drain to Source Voltage (Vdss): 55 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: PG-TO262-3, Vgs(th) (Max) @ Id: 4V @ 110µA.