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IPL60R125P7AUMA1

IPL60R125P7AUMA1 Infineon Technologies

Infineon_IPL60R125P7_DS_v02_01_EN-3362792.pdf Hersteller: Infineon Technologies
MOSFET HIGH POWER_NEW
auf Bestellung 11280 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
8+6.92 EUR
10+ 6.03 EUR
25+ 5.93 EUR
100+ 5.1 EUR
250+ 5.04 EUR
500+ 4.65 EUR
1000+ 4.11 EUR
Mindestbestellmenge: 8
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Technische Details IPL60R125P7AUMA1 Infineon Technologies

Description: MOSFET N-CH 600V 27A 4VSON, Packaging: Tape & Reel (TR), Package / Case: 4-PowerTSFN, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 27A (Tc), Rds On (Max) @ Id, Vgs: 125mOhm @ 8.2A, 10V, Power Dissipation (Max): 111W (Tc), Vgs(th) (Max) @ Id: 4V @ 410µA, Supplier Device Package: PG-VSON-4, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1544 pF @ 400 V.

Weitere Produktangebote IPL60R125P7AUMA1 nach Preis ab 4.19 EUR bis 8.09 EUR

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Preis ohne MwSt
IPL60R125P7AUMA1 IPL60R125P7AUMA1 Hersteller : Infineon Technologies Infineon-IPL60R125P7-DS-v02_00-EN.pdf?fileId=5546d4625ee5d4cd015eebed2c195b42 Description: MOSFET N-CH 600V 27A 4VSON
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 8.2A, 10V
Power Dissipation (Max): 111W (Tc)
Vgs(th) (Max) @ Id: 4V @ 410µA
Supplier Device Package: PG-VSON-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1544 pF @ 400 V
auf Bestellung 5531 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
4+8.09 EUR
10+ 6.8 EUR
100+ 5.5 EUR
500+ 4.89 EUR
1000+ 4.19 EUR
Mindestbestellmenge: 4
IPL60R125P7AUMA1 IPL60R125P7AUMA1 Hersteller : Infineon Technologies infineon-ipl60r125p7-ds-v02_01-en.pdf Trans MOSFET N-CH 600V 27A 4-Pin VSON EP T/R
Produkt ist nicht verfügbar
IPL60R125P7AUMA1 Hersteller : INFINEON TECHNOLOGIES Infineon-IPL60R125P7-DS-v02_00-EN.pdf?fileId=5546d4625ee5d4cd015eebed2c195b42 IPL60R125P7 SMD N channel transistors
Produkt ist nicht verfügbar
IPL60R125P7AUMA1 IPL60R125P7AUMA1 Hersteller : Infineon Technologies Infineon-IPL60R125P7-DS-v02_00-EN.pdf?fileId=5546d4625ee5d4cd015eebed2c195b42 Description: MOSFET N-CH 600V 27A 4VSON
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 8.2A, 10V
Power Dissipation (Max): 111W (Tc)
Vgs(th) (Max) @ Id: 4V @ 410µA
Supplier Device Package: PG-VSON-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1544 pF @ 400 V
Produkt ist nicht verfügbar