IPL60R160CFD7AUMA1 Infineon Technologies
| Anzahl | Privatkunde |
|---|---|
| 221+ | 3.02 EUR |
| 500+ | 2.83 EUR |
| 1000+ | 2.62 EUR |
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Lieferzeit:
14-21 Tag (e)
Mindestmenge:
221 Stücke
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Technische Details IPL60R160CFD7AUMA1 Infineon Technologies
Description: MOSFET N CH, Packaging: Tape & Reel (TR), Package / Case: 4-PowerTSFN, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 16A (Tc), Rds On (Max) @ Id, Vgs: 160mOhm @ 6.8A, 10V, Power Dissipation (Max): 95W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 340µA, Supplier Device Package: PG-VSON-4-1, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 400 V.
Weitere Produktangebote IPL60R160CFD7AUMA1 nach Preis ab 2.78 EUR bis 7.66 EUR
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IPL60R160CFD7AUMA1 | Infineon Technologies |
 Description: MOSFET N CHPackaging: Cut Tape (CT) Package / Case: 4-PowerTSFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Rds On (Max) @ Id, Vgs: 160mOhm @ 6.8A, 10V Power Dissipation (Max): 95W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 340µA Supplier Device Package: PG-VSON-4-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 400 V |
auf Bestellung 8 Stücke: Lieferzeit 10-14 Tag (e) |
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IPL60R160CFD7AUMA1 | Infineon Technologies |
MOSFETs HIGH POWER_NEW |
auf Bestellung 2695 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPL60R160CFD7AUMA1 |
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Hersteller: Infineon Technologies
Description: MOSFET N CH
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 6.8A, 10V
Power Dissipation (Max): 95W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 340µA
Supplier Device Package: PG-VSON-4-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 400 V
Description: MOSFET N CH
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 6.8A, 10V
Power Dissipation (Max): 95W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 340µA
Supplier Device Package: PG-VSON-4-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 400 V
auf Bestellung 8 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 7.63 EUR |
| IPL60R160CFD7AUMA1 |
|
Hersteller: Infineon Technologies
MOSFETs HIGH POWER_NEW
MOSFETs HIGH POWER_NEW
auf Bestellung 2695 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 7.66 EUR |
| 10+ | 4.52 EUR |
| 100+ | 3.69 EUR |
| 500+ | 3.08 EUR |
| 1000+ | 2.98 EUR |
| 3000+ | 2.78 EUR |