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IPL60R180P6AUMA1

IPL60R180P6AUMA1 Infineon Technologies

DS_IPL60R180P6_2_0.pdf?fileId=5546d4614755559a01479131b3626146 Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 22.4A 4VSON
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22.4A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 9A, 10V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 750µA
Supplier Device Package: PG-VSON-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2080 pF @ 100 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+2.18 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details IPL60R180P6AUMA1 Infineon Technologies

Description: MOSFET N-CH 600V 22.4A 4VSON, Packaging: Tape & Reel (TR), Package / Case: 4-PowerTSFN, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 22.4A (Tc), Rds On (Max) @ Id, Vgs: 180mOhm @ 9A, 10V, Power Dissipation (Max): 176W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 750µA, Supplier Device Package: PG-VSON-4, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2080 pF @ 100 V.

Weitere Produktangebote IPL60R180P6AUMA1 nach Preis ab 2.17 EUR bis 4.31 EUR

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IPL60R180P6AUMA1 IPL60R180P6AUMA1 Hersteller : Infineon Technologies DS_IPL60R180P6_2_0.pdf?fileId=5546d4614755559a01479131b3626146 Description: MOSFET N-CH 600V 22.4A 4VSON
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22.4A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 9A, 10V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 750µA
Supplier Device Package: PG-VSON-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2080 pF @ 100 V
auf Bestellung 4959 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.84 EUR
10+3.1 EUR
100+2.68 EUR
500+2.28 EUR
1000+2.17 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IPL60R180P6AUMA1 IPL60R180P6AUMA1 Hersteller : Infineon Technologies Infineon_IPL60R180P6_DS_v02_01_EN-1227198.pdf MOSFETs HIGH POWER PRICE/PERFORM
auf Bestellung 7151 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+4.31 EUR
10+3.29 EUR
100+2.71 EUR
500+2.46 EUR
1000+2.45 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IPL60R180P6AUMA1 IPL60R180P6AUMA1 Hersteller : Infineon Technologies 4703745163991559ds_ipl60r180p6_2_0.pdffolderiddb3a3043163797a6011637d4bae7003bfil.pdf Trans MOSFET N-CH 600V 22.4A Automotive 5-Pin Thin-PAK T/R
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IPL60R180P6AUMA1 Hersteller : INFINEON TECHNOLOGIES DS_IPL60R180P6_2_0.pdf?fileId=5546d4614755559a01479131b3626146 IPL60R180P6AUMA1 SMD N channel transistors
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