auf Bestellung 3485 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 4.52 EUR |
| 10+ | 2.73 EUR |
| 100+ | 2.02 EUR |
| 500+ | 1.69 EUR |
| 1000+ | 1.66 EUR |
| 3000+ | 1.43 EUR |
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Technische Details IPL60R185P7AUMA1 Infineon Technologies
Description: MOSFET N-CH 600V 19A 4VSON, Packaging: Tape & Reel (TR), Package / Case: 4-PowerTSFN, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 19A (Tc), Rds On (Max) @ Id, Vgs: 185mOhm @ 5.6A, 10V, Power Dissipation (Max): 81W (Tc), Vgs(th) (Max) @ Id: 4V @ 280µA, Supplier Device Package: PG-VSON-4, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1081 pF @ 400 V.
Weitere Produktangebote IPL60R185P7AUMA1 nach Preis ab 1.7 EUR bis 4.54 EUR
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IPL60R185P7AUMA1 | Hersteller : Infineon Technologies |
 Description: MOSFET N-CH 600V 19A 4VSONPackaging: Cut Tape (CT) Package / Case: 4-PowerTSFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Rds On (Max) @ Id, Vgs: 185mOhm @ 5.6A, 10V Power Dissipation (Max): 81W (Tc) Vgs(th) (Max) @ Id: 4V @ 280µA Supplier Device Package: PG-VSON-4 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1081 pF @ 400 V |
auf Bestellung 2779 Stücke: Lieferzeit 10-14 Tag (e) |
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IPL60R185P7AUMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 600V 19A 4-Pin VSON EP T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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IPL60R185P7AUMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 600V 19A 4VSON Packaging: Tape & Reel (TR) Package / Case: 4-PowerTSFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Rds On (Max) @ Id, Vgs: 185mOhm @ 5.6A, 10V Power Dissipation (Max): 81W (Tc) Vgs(th) (Max) @ Id: 4V @ 280µA Supplier Device Package: PG-VSON-4 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1081 pF @ 400 V |
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