IPL60R210P6AUMA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 19.2A 4VSON
Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-VSON-4
Vgs(th) (Max) @ Id: 4.5V @ 630µA
Power Dissipation (Max): 151W (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 7.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 19.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-PowerTSFN
Packaging: Tape & Reel (TR)
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Technische Details IPL60R210P6AUMA1 Infineon Technologies
Description: MOSFET N-CH 600V 19.2A 4VSON, Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: PG-VSON-4, Vgs(th) (Max) @ Id: 4.5V @ 630µA, Power Dissipation (Max): 151W (Tc), Rds On (Max) @ Id, Vgs: 210mOhm @ 7.6A, 10V, Current - Continuous Drain (Id) @ 25°C: 19.2A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -40°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 4-PowerTSFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote IPL60R210P6AUMA1 nach Preis ab 1.98 EUR bis 5.76 EUR
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IPL60R210P6AUMA1 | Infineon Technologies |
Description: MOSFET N-CH 600V 19.2A 4VSON Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: PG-VSON-4 Vgs(th) (Max) @ Id: 4.5V @ 630µA Power Dissipation (Max): 151W (Tc) Rds On (Max) @ Id, Vgs: 210mOhm @ 7.6A, 10V Current - Continuous Drain (Id) @ 25°C: 19.2A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-PowerTSFN Packaging: Cut Tape (CT) |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
|
| IPL60R210P6AUMA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 19.2A 4VSON
Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-VSON-4
Vgs(th) (Max) @ Id: 4.5V @ 630µA
Power Dissipation (Max): 151W (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 7.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 19.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-PowerTSFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 600V 19.2A 4VSON
Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-VSON-4
Vgs(th) (Max) @ Id: 4.5V @ 630µA
Power Dissipation (Max): 151W (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 7.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 19.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-PowerTSFN
Packaging: Cut Tape (CT)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 5.76 EUR |
| 10+ | 3.76 EUR |
| 100+ | 2.62 EUR |
| 500+ | 2.14 EUR |
| 1000+ | 1.98 EUR |