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IPL60R285P7AUMA1

IPL60R285P7AUMA1 Infineon Technologies

infineon-ipl60r285p7-ds-en.pdf Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 13A 4VSON
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 285mOhm @ 3.8A, 10V
Power Dissipation (Max): 59W (Tc)
Vgs(th) (Max) @ Id: 4V @ 190µA
Supplier Device Package: PG-VSON-4
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 761 pF @ 400 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+1.23 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details IPL60R285P7AUMA1 Infineon Technologies

Description: MOSFET N-CH 600V 13A 4VSON, Packaging: Tape & Reel (TR), Package / Case: 4-PowerTSFN, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 13A (Tc), Rds On (Max) @ Id, Vgs: 285mOhm @ 3.8A, 10V, Power Dissipation (Max): 59W (Tc), Vgs(th) (Max) @ Id: 4V @ 190µA, Supplier Device Package: PG-VSON-4, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 761 pF @ 400 V.

Weitere Produktangebote IPL60R285P7AUMA1 nach Preis ab 1.27 EUR bis 2.15 EUR

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IPL60R285P7AUMA1 IPL60R285P7AUMA1 Hersteller : Infineon Technologies Infineon_IPL60R285P7_DS_v02_01_EN-3362665.pdf MOSFETs HIGH POWER_NEW
auf Bestellung 1754 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+2.11 EUR
10+1.78 EUR
100+1.61 EUR
500+1.44 EUR
1000+1.37 EUR
3000+1.27 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IPL60R285P7AUMA1 IPL60R285P7AUMA1 Hersteller : Infineon Technologies infineon-ipl60r285p7-ds-en.pdf Description: MOSFET N-CH 600V 13A 4VSON
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 285mOhm @ 3.8A, 10V
Power Dissipation (Max): 59W (Tc)
Vgs(th) (Max) @ Id: 4V @ 190µA
Supplier Device Package: PG-VSON-4
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 761 pF @ 400 V
auf Bestellung 5920 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.15 EUR
10+1.81 EUR
100+1.62 EUR
500+1.47 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH