IPL60R2K1C6SATMA1 Infineon Technologies

Description: MOSFET N-CH 600V 2.3A THIN-PAK, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: PG-TSON-8-2, Vgs(th) (Max) @ Id: 3.5V @ 60µA, Power Dissipation (Max): 21.6W (Tc), Rds On (Max) @ Id, Vgs: 2.1Ohm @ 760mA, 10V, Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -40°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V.