IPL60R385CP Infineon Technologies

Description: COOLMOS N-CHANNEL POWER MOSFET, Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: PG-VSON-4-1, Vgs(th) (Max) @ Id: 3.5V @ 340µA, Power Dissipation (Max): 83W (Tc), Rds On (Max) @ Id, Vgs: 385mOhm @ 5.2A, 10V, Current - Continuous Drain (Id) @ 25°C: 9A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -40°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 4-PowerTSFN, Packaging: Bulk.