IPL60R385CP Infineon Technologies
auf Bestellung 2294 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 13+ | 4.06 EUR |
| 14+ | 3.85 EUR |
| 100+ | 3.74 EUR |
| 250+ | 3.56 EUR |
| 500+ | 3.48 EUR |
| 1000+ | 3.12 EUR |
| 3000+ | 2.86 EUR |
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Technische Details IPL60R385CP Infineon Technologies
Description: COOLMOS N-CHANNEL POWER MOSFET, Packaging: Bulk, Package / Case: 4-PowerTSFN, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9A (Tc), Rds On (Max) @ Id, Vgs: 385mOhm @ 5.2A, 10V, Power Dissipation (Max): 83W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 340µA, Supplier Device Package: PG-VSON-4-1, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 100 V.
Weitere Produktangebote IPL60R385CP
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| IPL60R385CP | Hersteller : Infineon Technologies |
 Description: COOLMOS N-CHANNEL POWER MOSFETPackaging: Bulk Package / Case: 4-PowerTSFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 385mOhm @ 5.2A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 340µA Supplier Device Package: PG-VSON-4-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 100 V |
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