IPL60R385CPAUMA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: MOSFET N-CH 600V 9A 4VSON
Packaging: Bulk
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 385mOhm @ 5.2A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 340µA
Supplier Device Package: PG-VSON-4
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 100 V
auf Bestellung 34754 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 231+ | 2.14 EUR |
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Technische Details IPL60R385CPAUMA1 Infineon Technologies
Description: MOSFET N-CH 600V 9A 4VSON, Packaging: Tape & Reel (TR), Package / Case: 4-PowerTSFN, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9A (Tc), Rds On (Max) @ Id, Vgs: 385mOhm @ 5.2A, 10V, Power Dissipation (Max): 83W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 340µA, Supplier Device Package: PG-VSON-4, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 100 V.
Weitere Produktangebote IPL60R385CPAUMA1 nach Preis ab 2.17 EUR bis 4.2 EUR
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IPL60R385CPAUMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 650V 9A 4-Pin VSON T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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IPL60R385CPAUMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 650V 9A 4-Pin VSON T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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IPL60R385CPAUMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 650V 9A 4-Pin VSON T/R |
auf Bestellung 18000 Stücke: Lieferzeit 14-21 Tag (e) |
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IPL60R385CPAUMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 650V 9A 4-Pin VSON T/R |
Produkt ist nicht verfügbar |
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IPL60R385CPAUMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 9A; 83W; PG-VSON-4 Type of transistor: N-MOSFET Technology: CoolMOS™ CP Polarisation: unipolar Drain-source voltage: 600V Drain current: 9A Power dissipation: 83W Case: PG-VSON-4 Gate-source voltage: ±20V On-state resistance: 0.385Ω Mounting: SMD Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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IPL60R385CPAUMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 650V 9A 4-Pin VSON T/R |
Produkt ist nicht verfügbar |
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IPL60R385CPAUMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 600V 9A 4VSON Packaging: Tape & Reel (TR) Package / Case: 4-PowerTSFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 385mOhm @ 5.2A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 340µA Supplier Device Package: PG-VSON-4 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 100 V |
Produkt ist nicht verfügbar |
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IPL60R385CPAUMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 600V 9A 4VSON Packaging: Cut Tape (CT) Package / Case: 4-PowerTSFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 385mOhm @ 5.2A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 340µA Supplier Device Package: PG-VSON-4 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 100 V |
Produkt ist nicht verfügbar |
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IPL60R385CPAUMA1 | Hersteller : Infineon Technologies |
MOSFET LOW POWER_LEGACY |
Produkt ist nicht verfügbar |
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IPL60R385CPAUMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 9A; 83W; PG-VSON-4 Type of transistor: N-MOSFET Technology: CoolMOS™ CP Polarisation: unipolar Drain-source voltage: 600V Drain current: 9A Power dissipation: 83W Case: PG-VSON-4 Gate-source voltage: ±20V On-state resistance: 0.385Ω Mounting: SMD Kind of channel: enhanced |
Produkt ist nicht verfügbar |