IPL60R650P6SATMA1 Infineon Technologies

Description: MOSFET N-CH 600V 6.7A 8THINPAK, Input Capacitance (Ciss) (Max) @ Vds: 557 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Not For New Designs, Supplier Device Package: 8-ThinPak (5x6), Vgs(th) (Max) @ Id: 4.5V @ 200µA, Power Dissipation (Max): 56.8W (Tc), Rds On (Max) @ Id, Vgs: 650mOhm @ 2.4A, 10V, Current - Continuous Drain (Id) @ 25°C: 6.7A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -40°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR).