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IPL60R650P6SATMA1

IPL60R650P6SATMA1 Infineon Technologies


DS_IPL60R650P6S_2_0-1730831.pdf Hersteller: Infineon Technologies
MOSFETs N-Ch 600V 6.7A ThinPAK 5x6
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Lieferzeit 10-14 Tag (e)
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1+2.85 EUR
10+2.22 EUR
100+1.72 EUR
500+1.46 EUR
1000+1.16 EUR
2500+1.05 EUR
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Technische Details IPL60R650P6SATMA1 Infineon Technologies

Description: MOSFET N-CH 600V 6.7A 8THINPAK, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6.7A (Tc), Rds On (Max) @ Id, Vgs: 650mOhm @ 2.4A, 10V, Power Dissipation (Max): 56.8W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 200µA, Supplier Device Package: 8-ThinPak (5x6), Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 557 pF @ 100 V.

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IPL60R650P6SATMA1 IPL60R650P6SATMA1 Hersteller : Infineon Technologies 232ds_ipl60r650p6s_2_0.pdffolderiddb3a3043156fd5730115c736bcc70ff2fi.pdf Trans MOSFET N-CH 600V 6.7A 8-Pin Thin-PAK EP T/R
auf Bestellung 2056 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
IPL60R650P6SATMA1 Hersteller : INFINEON TECHNOLOGIES DS_IPL60R650P6S_2_0.pdf?fileId=5546d4614755559a014758fc7b850037 IPL60R650P6SATMA1 SMD N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPL60R650P6SATMA1 IPL60R650P6SATMA1 Hersteller : Infineon Technologies DS_IPL60R650P6S_2_0.pdf?fileId=5546d4614755559a014758fc7b850037 Description: MOSFET N-CH 600V 6.7A 8THINPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.7A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 2.4A, 10V
Power Dissipation (Max): 56.8W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 200µA
Supplier Device Package: 8-ThinPak (5x6)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 557 pF @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPL60R650P6SATMA1 IPL60R650P6SATMA1 Hersteller : Infineon Technologies DS_IPL60R650P6S_2_0.pdf?fileId=5546d4614755559a014758fc7b850037 Description: MOSFET N-CH 600V 6.7A 8THINPAK
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.7A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 2.4A, 10V
Power Dissipation (Max): 56.8W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 200µA
Supplier Device Package: 8-ThinPak (5x6)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 557 pF @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH