IPL60R650P6SATMA1 Infineon Technologies
| Anzahl | Preis |
|---|---|
| 1+ | 3.29 EUR |
| 10+ | 2.85 EUR |
| 100+ | 2.04 EUR |
| 500+ | 1.62 EUR |
| 1000+ | 1.43 EUR |
| 2500+ | 1.31 EUR |
| 5000+ | 0.81 EUR |
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Technische Details IPL60R650P6SATMA1 Infineon Technologies
Description: MOSFET N-CH 600V 6.7A 8THINPAK, Input Capacitance (Ciss) (Max) @ Vds: 557 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Not For New Designs, Supplier Device Package: 8-ThinPak (5x6), Vgs(th) (Max) @ Id: 4.5V @ 200µA, Power Dissipation (Max): 56.8W (Tc), Rds On (Max) @ Id, Vgs: 650mOhm @ 2.4A, 10V, Current - Continuous Drain (Id) @ 25°C: 6.7A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -40°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote IPL60R650P6SATMA1
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
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IPL60R650P6SATMA1 | Infineon Technologies |
 Description: MOSFET N-CH 600V 6.7A 8THINPAKInput Capacitance (Ciss) (Max) @ Vds: 557 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Not For New Designs Supplier Device Package: 8-ThinPak (5x6) Vgs(th) (Max) @ Id: 4.5V @ 200µA Power Dissipation (Max): 56.8W (Tc) Rds On (Max) @ Id, Vgs: 650mOhm @ 2.4A, 10V Current - Continuous Drain (Id) @ 25°C: 6.7A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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|
IPL60R650P6SATMA1 | Infineon Technologies |
Description: MOSFET N-CH 600V 6.7A 8THINPAK Input Capacitance (Ciss) (Max) @ Vds: 557 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Not For New Designs Supplier Device Package: 8-ThinPak (5x6) Vgs(th) (Max) @ Id: 4.5V @ 200µA Power Dissipation (Max): 56.8W (Tc) Rds On (Max) @ Id, Vgs: 650mOhm @ 2.4A, 10V Current - Continuous Drain (Id) @ 25°C: 6.7A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IPL60R650P6SATMA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 6.7A 8THINPAK
Input Capacitance (Ciss) (Max) @ Vds: 557 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: 8-ThinPak (5x6)
Vgs(th) (Max) @ Id: 4.5V @ 200µA
Power Dissipation (Max): 56.8W (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 2.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 600V 6.7A 8THINPAK
Input Capacitance (Ciss) (Max) @ Vds: 557 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: 8-ThinPak (5x6)
Vgs(th) (Max) @ Id: 4.5V @ 200µA
Power Dissipation (Max): 56.8W (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 2.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IPL60R650P6SATMA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 6.7A 8THINPAK
Input Capacitance (Ciss) (Max) @ Vds: 557 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: 8-ThinPak (5x6)
Vgs(th) (Max) @ Id: 4.5V @ 200µA
Power Dissipation (Max): 56.8W (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 2.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 600V 6.7A 8THINPAK
Input Capacitance (Ciss) (Max) @ Vds: 557 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: 8-ThinPak (5x6)
Vgs(th) (Max) @ Id: 4.5V @ 200µA
Power Dissipation (Max): 56.8W (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 2.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH