IPL65R115CFD7AUMA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: COOLMOS CFD7 SUPERJUNCTION MOSFE
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 115mOhm @ 9.7A, 10V
Power Dissipation (Max): 144W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 480µA
Supplier Device Package: PG-VSON-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1942 pF @ 400 V
auf Bestellung 2940 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 7.15 EUR |
| 10+ | 5.08 EUR |
| 100+ | 3.62 EUR |
| 500+ | 3.39 EUR |
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Technische Details IPL65R115CFD7AUMA1 Infineon Technologies
Description: COOLMOS CFD7 SUPERJUNCTION MOSFE, Packaging: Tape & Reel (TR), Package / Case: 4-PowerTSFN, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 24A (Tc), Rds On (Max) @ Id, Vgs: 115mOhm @ 9.7A, 10V, Power Dissipation (Max): 144W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 480µA, Supplier Device Package: PG-VSON-4, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1942 pF @ 400 V.
Weitere Produktangebote IPL65R115CFD7AUMA1 nach Preis ab 3.34 EUR bis 7.57 EUR
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IPL65R115CFD7AUMA1 | Hersteller : Infineon Technologies |
MOSFETs HIGH POWER_NEW |
auf Bestellung 2990 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPL65R115CFD7AUMA1 | Hersteller : Infineon Technologies |
N Channel Power Mosfet |
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IPL65R115CFD7AUMA1 | Hersteller : Infineon Technologies |
Description: COOLMOS CFD7 SUPERJUNCTION MOSFE Packaging: Tape & Reel (TR) Package / Case: 4-PowerTSFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 115mOhm @ 9.7A, 10V Power Dissipation (Max): 144W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 480µA Supplier Device Package: PG-VSON-4 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1942 pF @ 400 V |
Produkt ist nicht verfügbar |