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IPL65R115CFD7AUMA1

IPL65R115CFD7AUMA1 Infineon Technologies


Infineon-IPL65R115CFD7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7c9758f2017ca6df361922d7 Hersteller: Infineon Technologies
Description: COOLMOS CFD7 SUPERJUNCTION MOSFE
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 115mOhm @ 9.7A, 10V
Power Dissipation (Max): 144W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 480µA
Supplier Device Package: PG-VSON-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1942 pF @ 400 V
auf Bestellung 2940 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.15 EUR
10+5.08 EUR
100+3.62 EUR
500+3.39 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details IPL65R115CFD7AUMA1 Infineon Technologies

Description: COOLMOS CFD7 SUPERJUNCTION MOSFE, Packaging: Tape & Reel (TR), Package / Case: 4-PowerTSFN, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 24A (Tc), Rds On (Max) @ Id, Vgs: 115mOhm @ 9.7A, 10V, Power Dissipation (Max): 144W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 480µA, Supplier Device Package: PG-VSON-4, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1942 pF @ 400 V.

Weitere Produktangebote IPL65R115CFD7AUMA1 nach Preis ab 3.34 EUR bis 7.57 EUR

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IPL65R115CFD7AUMA1 IPL65R115CFD7AUMA1 Hersteller : Infineon Technologies Infineon_IPL65R115CFD7_DataSheet_v02_00_EN-2885795.pdf MOSFETs HIGH POWER_NEW
auf Bestellung 2990 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+7.57 EUR
10+5.60 EUR
25+5.09 EUR
100+4.00 EUR
500+3.34 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IPL65R115CFD7AUMA1 Hersteller : Infineon Technologies infineon-ipl65r115cfd7-datasheet-v02_00-en.pdf N Channel Power Mosfet
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPL65R115CFD7AUMA1 IPL65R115CFD7AUMA1 Hersteller : Infineon Technologies Infineon-IPL65R115CFD7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7c9758f2017ca6df361922d7 Description: COOLMOS CFD7 SUPERJUNCTION MOSFE
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 115mOhm @ 9.7A, 10V
Power Dissipation (Max): 144W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 480µA
Supplier Device Package: PG-VSON-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1942 pF @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH