IPL65R165CFDAUMA2 Infineon Technologies

Description: MOSFET N-CH 650V 21.3A 4VSON, Packaging: Tape & Reel (TR), Package / Case: 4-PowerTSFN, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 21.3A (Tc), Rds On (Max) @ Id, Vgs: 165mOhm @ 9.3A, 10V, Power Dissipation (Max): 195W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 900µA, Supplier Device Package: PG-VSON-4, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2340 pF @ 100 V.