IPL65R1K5C6SATMA1 Infineon Technologies
| Anzahl | Preis |
|---|---|
| 5000+ | 0.49 EUR |
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Technische Details IPL65R1K5C6SATMA1 Infineon Technologies
Description: MOSFET N-CH 650V 3A THIN-PAK, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3A (Tc), Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1A, 10V, Power Dissipation (Max): 26.6W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 100µA, Supplier Device Package: PG-TSON-8-2, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 100 V.
Weitere Produktangebote IPL65R1K5C6SATMA1 nach Preis ab 0.61 EUR bis 11.91 EUR
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IPL65R1K5C6SATMA1 | Hersteller : Infineon Technologies |
 Trans MOSFET N-CH 650V 3A 8-Pin Thin-PAK EP T/R |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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IPL65R1K5C6SATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 650V 3A 8-Pin Thin-PAK EP T/R |
auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
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IPL65R1K5C6SATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 650V 3A 8-Pin Thin-PAK EP T/R |
auf Bestellung 38647 Stücke: Lieferzeit 14-21 Tag (e) |
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IPL65R1K5C6SATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 650V 3A 8-Pin Thin-PAK EP T/R |
auf Bestellung 23877 Stücke: Lieferzeit 14-21 Tag (e) |
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IPL65R1K5C6SATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 650V 3A 8-Pin Thin-PAK EP T/R |
auf Bestellung 9328 Stücke: Lieferzeit 14-21 Tag (e) |
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IPL65R1K5C6SATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 650V 3A THIN-PAK Packaging: Bulk Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1A, 10V Power Dissipation (Max): 26.6W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 100µA Supplier Device Package: PG-TSON-8-2 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 100 V |
auf Bestellung 71852 Stücke: Lieferzeit 10-14 Tag (e) |
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IPL65R1K5C6SATMA1 | Hersteller : Infineon Technologies |
MOSFET N-Ch 650V 3A ThinPAK 5x6 |
auf Bestellung 4940 Stücke: Lieferzeit 10-14 Tag (e) |
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IPL65R1K5C6SATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 3A; 26.6W; PG-VSON-4 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 3A Power dissipation: 26.6W Case: PG-VSON-4 Gate-source voltage: ±20V On-state resistance: 1.5Ω Mounting: SMD Kind of channel: enhancement |
auf Bestellung 6 Stücke: Lieferzeit 14-21 Tag (e) |
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IPL65R1K5C6SATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 650V 3A THIN-PAK Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1A, 10V Power Dissipation (Max): 26.6W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 100µA Supplier Device Package: PG-TSON-8-2 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 100 V |
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