IPL65R1K5C6SATMA1 Infineon Technologies

Description: MOSFET N-CH 650V 3A THIN-PAK, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3A (Tc), Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1A, 10V, Power Dissipation (Max): 26.6W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 100µA, Supplier Device Package: PG-TSON-8-2, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 100 V.