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IPN60R2K0PFD7SATMA1 Infineon Technologies


Infineon-IPN60R2K0PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626df6ee62016e22827e126756
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 3A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-3
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V
Power Dissipation (Max): 6W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 30µA
Supplier Device Package: PG-SOT223-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 3.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 134 pF @ 400 V
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+0.33 EUR
6000+0.3 EUR
9000+0.29 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details IPN60R2K0PFD7SATMA1 Infineon Technologies

Description: MOSFET N-CH 600V 3A SOT223, Packaging: Tape & Reel (TR), Package / Case: TO-261-3, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3A (Tc), Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V, Power Dissipation (Max): 6W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 30µA, Supplier Device Package: PG-SOT223-3-1, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 3.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 134 pF @ 400 V.

Weitere Produktangebote IPN60R2K0PFD7SATMA1 nach Preis ab 0.28 EUR bis 1.53 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Preis
IPN60R2K0PFD7SATMA1 IPN60R2K0PFD7SATMA1 Infineon Technologies Infineon_IPN60R2K0PFD7S_DataSheet_v02_00_EN-1840690.pdf MOSFETs CONSUMER
auf Bestellung 3928 Stücke:
Lieferzeit 10-14 Tag (e)
3+1.09 EUR
10+0.78 EUR
100+0.53 EUR
500+0.43 EUR
1000+0.39 EUR
3000+0.29 EUR
6000+0.28 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPN60R2K0PFD7SATMA1 IPN60R2K0PFD7SATMA1 Infineon Technologies Infineon-IPN60R2K0PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626df6ee62016e22827e126756 Description: MOSFET N-CH 600V 3A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-3
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V
Power Dissipation (Max): 6W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 30µA
Supplier Device Package: PG-SOT223-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 3.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 134 pF @ 400 V
auf Bestellung 13562 Stücke:
Lieferzeit 10-14 Tag (e)
12+1.53 EUR
19+0.95 EUR
100+0.62 EUR
500+0.47 EUR
1000+0.43 EUR
Mindestbestellmenge: 12 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPN60R2K0PFD7SATMA1 Infineon_IPN60R2K0PFD7S_DataSheet_v02_00_EN-1840690.pdf
Hersteller: Infineon Technologies
MOSFETs CONSUMER
auf Bestellung 3928 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3+1.09 EUR
10+0.78 EUR
100+0.53 EUR
500+0.43 EUR
1000+0.39 EUR
3000+0.29 EUR
6000+0.28 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPN60R2K0PFD7SATMA1 Infineon-IPN60R2K0PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626df6ee62016e22827e126756
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 3A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-3
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V
Power Dissipation (Max): 6W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 30µA
Supplier Device Package: PG-SOT223-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 3.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 134 pF @ 400 V
auf Bestellung 13562 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
12+1.53 EUR
19+0.95 EUR
100+0.62 EUR
500+0.47 EUR
1000+0.43 EUR
Mindestbestellmenge: 12 Stücke
Im Einkaufswagen  Stück im Wert von  UAH