IPN60R360P7SATMA1 Infineon Technologies
auf Bestellung 12000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 1.36 EUR |
| 6000+ | 1.29 EUR |
| 12000+ | 1.23 EUR |
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Technische Details IPN60R360P7SATMA1 Infineon Technologies
Description: MOSFET N-CHANNEL 600V 9A SOT223, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9A (Tc), Rds On (Max) @ Id, Vgs: 360mOhm @ 2.7A, 10V, Power Dissipation (Max): 7W (Tc), Vgs(th) (Max) @ Id: 4V @ 140µA, Supplier Device Package: PG-SOT223, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 400 V.
Weitere Produktangebote IPN60R360P7SATMA1 nach Preis ab 0.59 EUR bis 1.49 EUR
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IPN60R360P7SATMA1 | Hersteller : Infineon Technologies |
 MOSFET CONSUMER |
auf Bestellung 6919 Stücke: Lieferzeit 10-14 Tag (e) |
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IPN60R360P7SATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 600V 9A 3-Pin(2+Tab) SOT-223 T/R |
auf Bestellung 12000 Stücke: Lieferzeit 14-21 Tag (e) |
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IPN60R360P7SATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 600V 9A 3-Pin(2+Tab) SOT-223 T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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IPN60R360P7SATMA1 Produktcode: 133578 |
Transistoren > MOSFET N-CH |
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| IPN60R360P7SATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 6A; Idm: 26A; 7W; PG-SOT223 Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 650V Drain current: 6A Pulsed drain current: 26A Power dissipation: 7W Case: PG-SOT223 Gate-source voltage: ±20V On-state resistance: 0.36Ω Mounting: SMD Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 3000 Stücke |
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IPN60R360P7SATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 600V 9A 3-Pin(2+Tab) SOT-223 T/R |
Produkt ist nicht verfügbar |
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IPN60R360P7SATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 600V 9A 3-Pin(2+Tab) SOT-223 T/R |
Produkt ist nicht verfügbar |
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IPN60R360P7SATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CHANNEL 600V 9A SOT223 Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 360mOhm @ 2.7A, 10V Power Dissipation (Max): 7W (Tc) Vgs(th) (Max) @ Id: 4V @ 140µA Supplier Device Package: PG-SOT223 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 400 V |
Produkt ist nicht verfügbar |
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IPN60R360P7SATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CHANNEL 600V 9A SOT223 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 360mOhm @ 2.7A, 10V Power Dissipation (Max): 7W (Tc) Vgs(th) (Max) @ Id: 4V @ 140µA Supplier Device Package: PG-SOT223 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 400 V |
Produkt ist nicht verfügbar |
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| IPN60R360P7SATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 6A; Idm: 26A; 7W; PG-SOT223 Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 650V Drain current: 6A Pulsed drain current: 26A Power dissipation: 7W Case: PG-SOT223 Gate-source voltage: ±20V On-state resistance: 0.36Ω Mounting: SMD Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
Produkt ist nicht verfügbar |