| Anzahl | Preis |
|---|---|
| 3+ | 1.1 EUR |
| 10+ | 0.97 EUR |
| 100+ | 0.67 EUR |
| 500+ | 0.55 EUR |
| 1000+ | 0.47 EUR |
| 3000+ | 0.43 EUR |
| 6000+ | 0.4 EUR |
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Technische Details IPN65R1K5CEATMA1 Infineon Technologies
Description: MOSFET N-CH 650V 5.2A SOT223, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc), Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1A, 10V, Power Dissipation (Max): 5W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 100µA, Supplier Device Package: PG-SOT223, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 100 V.
Weitere Produktangebote IPN65R1K5CEATMA1
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
| IPN65R1K5CEATMA1 | Infineon |
 N-Channel 5.2A (Tc) 5W (Tc) Surface Mount PG-SOT223 Діоди та діодні збірки |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
 |
IPN65R1K5CEATMA1 | Infineon Technologies |
Description: MOSFET N-CH 650V 5.2A SOT223 Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1A, 10V Power Dissipation (Max): 5W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 100µA Supplier Device Package: PG-SOT223 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 100 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
|
|
IPN65R1K5CEATMA1 | Infineon Technologies |
Description: MOSFET N-CH 650V 5.2A SOT223 Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: PG-SOT223 Vgs(th) (Max) @ Id: 3.5V @ 100µA Power Dissipation (Max): 5W (Tc) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1A, 10V Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IPN65R1K5CEATMA1 |
|
Hersteller: Infineon
N-Channel 5.2A (Tc) 5W (Tc) Surface Mount PG-SOT223 Діоди та діодні збірки
N-Channel 5.2A (Tc) 5W (Tc) Surface Mount PG-SOT223 Діоди та діодні збірки
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IPN65R1K5CEATMA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 5.2A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1A, 10V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 100µA
Supplier Device Package: PG-SOT223
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 100 V
Description: MOSFET N-CH 650V 5.2A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1A, 10V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 100µA
Supplier Device Package: PG-SOT223
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 100 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IPN65R1K5CEATMA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 5.2A SOT223
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-SOT223
Vgs(th) (Max) @ Id: 3.5V @ 100µA
Power Dissipation (Max): 5W (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 650V 5.2A SOT223
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-SOT223
Vgs(th) (Max) @ Id: 3.5V @ 100µA
Power Dissipation (Max): 5W (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH