IPN70R1K0CEATMA1 Infineon Technologies
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.35 EUR |
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Technische Details IPN70R1K0CEATMA1 Infineon Technologies
Description: MOSFET N-CH 700V 7.4A SOT223, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc), Rds On (Max) @ Id, Vgs: 1Ohm @ 1.5A, 10V, Power Dissipation (Max): 5W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 150µA, Supplier Device Package: PG-SOT223, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 700 V, Gate Charge (Qg) (Max) @ Vgs: 14.9 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 328 pF @ 100 V.
Weitere Produktangebote IPN70R1K0CEATMA1 nach Preis ab 0.38 EUR bis 0.38 EUR
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IPN70R1K0CEATMA1 | Hersteller : Infineon Technologies |
 Trans MOSFET N-CH 700V 7.4A 3-Pin(2+Tab) SOT-223 T/R |
auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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IPN70R1K0CEATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 700V 7.4A 3-Pin(2+Tab) SOT-223 T/R |
auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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IPN70R1K0CEATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 700V; 4.7A; 5W; PG-SOT223 Mounting: SMD Case: PG-SOT223 Gate-source voltage: ±20V Drain-source voltage: 700V Drain current: 4.7A On-state resistance: 1Ω Type of transistor: N-MOSFET Power dissipation: 5W Polarisation: unipolar Gate charge: 15.2nC Technology: CoolMOS™ CE Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| IPN70R1K0CEATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 700V 7.4A SOT223 Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc) Rds On (Max) @ Id, Vgs: 1Ohm @ 1.5A, 10V Power Dissipation (Max): 5W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 150µA Supplier Device Package: PG-SOT223 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 700 V Gate Charge (Qg) (Max) @ Vgs: 14.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 328 pF @ 100 V |
Produkt ist nicht verfügbar |
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IPN70R1K0CEATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 700V; 4.7A; 5W; PG-SOT223 Mounting: SMD Case: PG-SOT223 Gate-source voltage: ±20V Drain-source voltage: 700V Drain current: 4.7A On-state resistance: 1Ω Type of transistor: N-MOSFET Power dissipation: 5W Polarisation: unipolar Gate charge: 15.2nC Technology: CoolMOS™ CE Kind of channel: enhanced |
Produkt ist nicht verfügbar |