IPN70R1K0CEATMA1 Infineon Technologies

Description: MOSFET N-CH 700V 7.4A SOT223, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc), Rds On (Max) @ Id, Vgs: 1Ohm @ 1.5A, 10V, Power Dissipation (Max): 5W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 150µA, Supplier Device Package: PG-SOT223, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 700 V, Gate Charge (Qg) (Max) @ Vgs: 14.9 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 328 pF @ 100 V.