| Anzahl | Preis |
|---|---|
| 4+ | 0.87 EUR |
| 10+ | 0.76 EUR |
| 100+ | 0.54 EUR |
| 500+ | 0.46 EUR |
| 1000+ | 0.36 EUR |
| 6000+ | 0.34 EUR |
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Technische Details IPN70R1K2P7SATMA1 Infineon Technologies
Description: MOSFET N-CH 700V 4.5A SOT223, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc), Rds On (Max) @ Id, Vgs: 1.2Ohm @ 900mA, 10V, Power Dissipation (Max): 6.3W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 40µA, Supplier Device Package: PG-SOT223, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 700 V, Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 174 pF @ 400 V.
Weitere Produktangebote IPN70R1K2P7SATMA1 nach Preis ab 0.41 EUR bis 0.97 EUR
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IPN70R1K2P7SATMA1 | Infineon Technologies |
 Description: MOSFET N-CH 700V 4.5A SOT223Input Capacitance (Ciss) (Max) @ Vds: 174 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 10 V Drain to Source Voltage (Vdss): 700 V Vgs (Max): ±16V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: PG-SOT223 Vgs(th) (Max) @ Id: 3.5V @ 40µA Power Dissipation (Max): 6.3W (Tc) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 900mA, 10V Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Packaging: Cut Tape (CT) |
auf Bestellung 1468 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPN70R1K2P7SATMA1 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 700V 4.5A SOT223
Input Capacitance (Ciss) (Max) @ Vds: 174 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 10 V
Drain to Source Voltage (Vdss): 700 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-SOT223
Vgs(th) (Max) @ Id: 3.5V @ 40µA
Power Dissipation (Max): 6.3W (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 900mA, 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 700V 4.5A SOT223
Input Capacitance (Ciss) (Max) @ Vds: 174 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 10 V
Drain to Source Voltage (Vdss): 700 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-SOT223
Vgs(th) (Max) @ Id: 3.5V @ 40µA
Power Dissipation (Max): 6.3W (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 900mA, 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
auf Bestellung 1468 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 19+ | 0.97 EUR |
| 22+ | 0.84 EUR |
| 100+ | 0.58 EUR |
| 500+ | 0.48 EUR |
| 1000+ | 0.41 EUR |