IPN70R900P7S Infineon Technologies

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 700V; 3.5A; 6.5W; PG-SOT223; ESD, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 700V, Drain current: 3.5A, Power dissipation: 6.5W, Case: PG-SOT223, On-state resistance: 0.9Ω, Mounting: SMD, Gate charge: 6.8nC, Kind of channel: enhancement, Technology: CoolMOS™ P7, Gate-source voltage: ±16V, Version: ESD.