IPN80R3K3P7ATMA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: MOSFET N-CH 800V 1.9A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc)
Rds On (Max) @ Id, Vgs: 3.3Ohm @ 590mA, 10V
Power Dissipation (Max): 6.1W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 30µA
Supplier Device Package: PG-SOT223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 500 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.47 EUR |
| 6000+ | 0.44 EUR |
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Technische Details IPN80R3K3P7ATMA1 Infineon Technologies
Description: MOSFET N-CH 800V 1.9A SOT223, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc), Rds On (Max) @ Id, Vgs: 3.3Ohm @ 590mA, 10V, Power Dissipation (Max): 6.1W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 30µA, Supplier Device Package: PG-SOT223, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 500 V.
Weitere Produktangebote IPN80R3K3P7ATMA1 nach Preis ab 0.43 EUR bis 1.21 EUR
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IPN80R3K3P7ATMA1 | Hersteller : Infineon Technologies |
MOSFET LOW POWER_NEW |
auf Bestellung 3000 Stücke: Lieferzeit 178-182 Tag (e) |
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IPN80R3K3P7ATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 800V 1.9A SOT223 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc) Rds On (Max) @ Id, Vgs: 3.3Ohm @ 590mA, 10V Power Dissipation (Max): 6.1W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 30µA Supplier Device Package: PG-SOT223 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 500 V |
auf Bestellung 7958 Stücke: Lieferzeit 10-14 Tag (e) |
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IPN80R3K3P7ATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 800V 1.9A 3-Pin(2+Tab) SOT-223 T/R |
Produkt ist nicht verfügbar |
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IPN80R3K3P7ATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 800V 1.9A 3-Pin(2+Tab) SOT-223 T/R |
Produkt ist nicht verfügbar |
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IPN80R3K3P7ATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 800V 1.9A 3-Pin(2+Tab) SOT-223 T/R |
Produkt ist nicht verfügbar |
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IPN80R3K3P7ATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 1.3A; 6.1W; PG-SOT223 Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 800V Drain current: 1.3A Power dissipation: 6.1W Case: PG-SOT223 Gate-source voltage: ±20V On-state resistance: 3.3Ω Mounting: SMD Gate charge: 6nC Kind of package: reel Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IPN80R3K3P7ATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 1.3A; 6.1W; PG-SOT223 Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 800V Drain current: 1.3A Power dissipation: 6.1W Case: PG-SOT223 Gate-source voltage: ±20V On-state resistance: 3.3Ω Mounting: SMD Gate charge: 6nC Kind of package: reel Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
Produkt ist nicht verfügbar |