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IPN95R1K2P7ATMA1

IPN95R1K2P7ATMA1 Infineon Technologies

Infineon-IPN95R1K2P7-DS-v02_00-EN.pdf?fileId=5546d462636cc8fb01643c097b3d575c
Hersteller: Infineon Technologies
Description: MOSFET N-CH 950V 6A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.7A, 10V
Power Dissipation (Max): 7W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 140µA
Supplier Device Package: PG-SOT223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 478 pF @ 400 V
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+0.85 EUR
6000+0.79 EUR
9000+0.76 EUR
15000+0.72 EUR
21000+0.7 EUR
Mindestbestellmenge: 3000 Stücke
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Technische Details IPN95R1K2P7ATMA1 Infineon Technologies

Description: MOSFET N-CH 950V 6A SOT223, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6A (Tc), Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.7A, 10V, Power Dissipation (Max): 7W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 140µA, Supplier Device Package: PG-SOT223, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 950 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 478 pF @ 400 V.

Weitere Produktangebote IPN95R1K2P7ATMA1 nach Preis ab 0.77 EUR bis 3.15 EUR

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IPN95R1K2P7ATMA1 IPN95R1K2P7ATMA1 Infineon Technologies Infineon_IPN95R1K2P7_DS_v02_00_EN-1731896.pdf MOSFETs LOW POWER_NEW
auf Bestellung 3642 Stücke:
Lieferzeit 10-14 Tag (e)
2+2.78 EUR
10+1.8 EUR
100+1.21 EUR
500+0.97 EUR
1000+0.89 EUR
3000+0.78 EUR
6000+0.77 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPN95R1K2P7ATMA1 IPN95R1K2P7ATMA1 Infineon Technologies Infineon-IPN95R1K2P7-DS-v02_00-EN.pdf?fileId=5546d462636cc8fb01643c097b3d575c Description: MOSFET N-CH 950V 6A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.7A, 10V
Power Dissipation (Max): 7W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 140µA
Supplier Device Package: PG-SOT223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 478 pF @ 400 V
auf Bestellung 30208 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.15 EUR
10+2 EUR
100+1.34 EUR
500+1.05 EUR
1000+0.96 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPN95R1K2P7ATMA1 Infineon_IPN95R1K2P7_DS_v02_00_EN-1731896.pdf
IPN95R1K2P7ATMA1
Hersteller: Infineon Technologies
MOSFETs LOW POWER_NEW
auf Bestellung 3642 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2+2.78 EUR
10+1.8 EUR
100+1.21 EUR
500+0.97 EUR
1000+0.89 EUR
3000+0.78 EUR
6000+0.77 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPN95R1K2P7ATMA1 Infineon-IPN95R1K2P7-DS-v02_00-EN.pdf?fileId=5546d462636cc8fb01643c097b3d575c
IPN95R1K2P7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 950V 6A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.7A, 10V
Power Dissipation (Max): 7W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 140µA
Supplier Device Package: PG-SOT223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 478 pF @ 400 V
auf Bestellung 30208 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
6+3.15 EUR
10+2 EUR
100+1.34 EUR
500+1.05 EUR
1000+0.96 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH