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IPN95R1K2P7ATMA1

IPN95R1K2P7ATMA1 Infineon Technologies

Infineon-IPN95R1K2P7-DS-v02_00-EN.pdf?fileId=5546d462636cc8fb01643c097b3d575c Hersteller: Infineon Technologies
Description: MOSFET N-CH 950V 6A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.7A, 10V
Power Dissipation (Max): 7W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 140µA
Supplier Device Package: PG-SOT223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 478 pF @ 400 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.86 EUR
6000+ 0.82 EUR
Mindestbestellmenge: 3000
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Technische Details IPN95R1K2P7ATMA1 Infineon Technologies

Description: MOSFET N-CH 950V 6A SOT223, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6A (Tc), Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.7A, 10V, Power Dissipation (Max): 7W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 140µA, Supplier Device Package: PG-SOT223, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 950 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 478 pF @ 400 V.

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IPN95R1K2P7ATMA1 IPN95R1K2P7ATMA1 Hersteller : Infineon Technologies Infineon-IPN95R1K2P7-DS-v02_00-EN.pdf?fileId=5546d462636cc8fb01643c097b3d575c Description: MOSFET N-CH 950V 6A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.7A, 10V
Power Dissipation (Max): 7W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 140µA
Supplier Device Package: PG-SOT223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 478 pF @ 400 V
auf Bestellung 7665 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
9+2.08 EUR
11+ 1.69 EUR
100+ 1.32 EUR
500+ 1.12 EUR
1000+ 0.91 EUR
Mindestbestellmenge: 9
IPN95R1K2P7ATMA1 IPN95R1K2P7ATMA1 Hersteller : Infineon Technologies Infineon_IPN95R1K2P7_DS_v02_00_EN-3164894.pdf MOSFET LOW POWER_NEW
auf Bestellung 103 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+2.62 EUR
10+ 2.36 EUR
100+ 1.83 EUR
500+ 1.48 EUR
1000+ 1.17 EUR
3000+ 1.06 EUR
Mindestbestellmenge: 2
IPN95R1K2P7ATMA1 Hersteller : INFINEON TECHNOLOGIES Infineon-IPN95R1K2P7-DS-v02_00-EN.pdf?fileId=5546d462636cc8fb01643c097b3d575c IPN95R1K2P7 SMD N channel transistors
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IPN95R1K2P7ATMA1 IPN95R1K2P7ATMA1 Hersteller : Infineon Technologies infineon-ipn95r1k2p7-ds-v02_00-en.pdf Trans MOSFET N-CH 950V 6A 3-Pin(2+Tab) SOT-223 T/R
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