Produkte > INFINEON TECHNOLOGIES > IPP015N04NGXKSA1
IPP015N04NGXKSA1

IPP015N04NGXKSA1 Infineon Technologies

IPB015N04N_rev2+0.pdf?folderId=db3a3043156fd5730115c7d50620107c&fileId=db3a30431689f4420116c474de8f0845
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 120A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 200µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 20000 pF @ 20 V
auf Bestellung 634 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3+8.52 EUR
50+4.48 EUR
100+4.09 EUR
500+3.41 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details IPP015N04NGXKSA1 Infineon Technologies

Description: MOSFET N-CH 40V 120A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 1.5mOhm @ 100A, 10V, Power Dissipation (Max): 250W (Tc), Vgs(th) (Max) @ Id: 4V @ 200µA, Supplier Device Package: PG-TO220-3-1, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 20000 pF @ 20 V.

Weitere Produktangebote IPP015N04NGXKSA1 nach Preis ab 3.89 EUR bis 23.84 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Preis
IPP015N04NGXKSA1 IPP015N04NGXKSA1 Infineon Technologies Infineon_IPB015N04N_DS_v02_02_en-1731690.pdf MOSFETs N-Ch 40V 120A TO220-3
auf Bestellung 76 Stücke:
Lieferzeit 10-14 Tag (e)
1+9.12 EUR
10+8.52 EUR
25+4.66 EUR
100+4.36 EUR
500+3.89 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IPP015N04NGXKSA1 IPP015N04NGXKSA1 INFINEON TECHNOLOGIES IPP015N04NG-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 250W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 250W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: OptiMOS™ 3
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
3+23.84 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPP015N04NGXKSA1 Infineon_IPB015N04N_DS_v02_02_en-1731690.pdf
IPP015N04NGXKSA1
Hersteller: Infineon Technologies
MOSFETs N-Ch 40V 120A TO220-3
auf Bestellung 76 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+9.12 EUR
10+8.52 EUR
25+4.66 EUR
100+4.36 EUR
500+3.89 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IPP015N04NGXKSA1 IPP015N04NG-DTE.pdf
IPP015N04NGXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 250W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 250W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: OptiMOS™ 3
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
3+23.84 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH