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IPP020N06NAKSA1

IPP020N06NAKSA1 Infineon Technologies

Infineon_IPP020N06N_DS_v02_03_en-1731819.pdf
Hersteller: Infineon Technologies
MOSFETs N-Ch 60V 120A TO220-3
auf Bestellung 296 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+4.26 EUR
10+4.15 EUR
25+2.85 EUR
100+2.78 EUR
250+2.76 EUR
500+2.53 EUR
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Technische Details IPP020N06NAKSA1 Infineon Technologies

Description: MOSFET N-CH 60V 29A/120A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 120A (Tc), Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V, Power Dissipation (Max): 3W (Ta), 214W (Tc), Vgs(th) (Max) @ Id: 2.8V @ 143µA, Supplier Device Package: PG-TO220-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7800 pF @ 30 V.

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IPP020N06NAKSA1 IPP020N06NAKSA1 Infineon Technologies IPP020N06N_Rev2.1.pdf?folderId=db3a30431ddc9372011ebafa04517f8b&fileId=db3a3043345a30bc013465ce627962f5 Description: MOSFET N-CH 60V 29A/120A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 120A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V
Power Dissipation (Max): 3W (Ta), 214W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 143µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7800 pF @ 30 V
auf Bestellung 480 Stücke:
Lieferzeit 10-14 Tag (e)
3+6.34 EUR
50+3.26 EUR
100+2.96 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPP020N06NAKSA1 Infineon Technologies Infineon-IPP020N06N.pdf N-канальний ПТ, Udss, В = 60, Id = 29 А, Ciss, пФ @ Uds, В = 7800 @ 30, Qg, нКл = 106 @ 10 В, Rds = 2 мОм @ 100 A, 10 В, Ugs(th) = 2,8 В @ 143 мкА, Р, Вт = 3, 214, Тексп, °C = -55...+175, Тип монт. = Вивідний, Id2 = 120 A,... Транзистори Корпус: PG-TO220
Anzahl je Verpackung: 50 Stücke
verfügbar 268 Stücke:
Im Einkaufswagen  Stück im Wert von  UAH
IPP020N06NAKSA1 IPP020N06N_Rev2.1.pdf?folderId=db3a30431ddc9372011ebafa04517f8b&fileId=db3a3043345a30bc013465ce627962f5
IPP020N06NAKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 29A/120A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 120A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V
Power Dissipation (Max): 3W (Ta), 214W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 143µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7800 pF @ 30 V
auf Bestellung 480 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3+6.34 EUR
50+3.26 EUR
100+2.96 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPP020N06NAKSA1 Infineon-IPP020N06N.pdf
Hersteller: Infineon Technologies
N-канальний ПТ, Udss, В = 60, Id = 29 А, Ciss, пФ @ Uds, В = 7800 @ 30, Qg, нКл = 106 @ 10 В, Rds = 2 мОм @ 100 A, 10 В, Ugs(th) = 2,8 В @ 143 мкА, Р, Вт = 3, 214, Тексп, °C = -55...+175, Тип монт. = Вивідний, Id2 = 120 A,... Транзистори Корпус: PG-TO220
Anzahl je Verpackung: 50 Stücke
verfügbar 268 Stücke:
Im Einkaufswagen  Stück im Wert von  UAH