IPP023N10N5AKSA1 Infineon Technologies
auf Bestellung 750 Stücke:
Lieferzeit 150-154 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 10.84 EUR |
| 10+ | 9.1 EUR |
| 25+ | 7.39 EUR |
| 100+ | 6.56 EUR |
| 250+ | 6.27 EUR |
| 500+ | 5.95 EUR |
| 1000+ | 5.26 EUR |
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Technische Details IPP023N10N5AKSA1 Infineon Technologies
Description: MOSFET N-CH 100V 120A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 2.3mOhm @ 100A, 10V, Power Dissipation (Max): 375W (Tc), Vgs(th) (Max) @ Id: 3.8V @ 270µA, Supplier Device Package: PG-TO220-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 15600 pF @ 50 V.
Weitere Produktangebote IPP023N10N5AKSA1 nach Preis ab 5.25 EUR bis 11.89 EUR
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IPP023N10N5AKSA1 | Hersteller : Infineon Technologies |
 Trans MOSFET N-CH 100V 120A 3-Pin(3+Tab) TO-220 Tube |
auf Bestellung 1116 Stücke: Lieferzeit 14-21 Tag (e) |
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IPP023N10N5AKSA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 100V 120A Automotive 3-Pin(3+Tab) TO-220 Tube |
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IPP023N10N5AKSA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 100V 120A 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |
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IPP023N10N5AKSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 375W; PG-TO220-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 100V Drain current: 120A Power dissipation: 375W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 2.3mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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IPP023N10N5AKSA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 100V 120A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 2.3mOhm @ 100A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 270µA Supplier Device Package: PG-TO220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 15600 pF @ 50 V |
Produkt ist nicht verfügbar |
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IPP023N10N5AKSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 375W; PG-TO220-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 100V Drain current: 120A Power dissipation: 375W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 2.3mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |