IPP023N10N5AKSA1 INFINEON TECHNOLOGIES
Hersteller: INFINEON TECHNOLOGIESCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 375W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 375W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.3mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 489 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 15+ | 4.98 EUR |
| 17+ | 4.46 EUR |
| 50+ | 3.95 EUR |
| 100+ | 3.55 EUR |
| 250+ | 3.36 EUR |
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Technische Details IPP023N10N5AKSA1 INFINEON TECHNOLOGIES
Description: MOSFET N-CH 100V 120A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 2.3mOhm @ 100A, 10V, Power Dissipation (Max): 375W (Tc), Vgs(th) (Max) @ Id: 3.8V @ 270µA, Supplier Device Package: PG-TO220-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 15600 pF @ 50 V.
Weitere Produktangebote IPP023N10N5AKSA1 nach Preis ab 4.46 EUR bis 7.78 EUR
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IPP023N10N5AKSA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 100V 120A 3-Pin(3+Tab) TO-220 Tube |
auf Bestellung 814 Stücke: Lieferzeit 14-21 Tag (e) |
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IPP023N10N5AKSA1 Produktcode: 215527
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IPP023N10N5AKSA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 100V 120A 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |
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IPP023N10N5AKSA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 100V 120A 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |
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IPP023N10N5AKSA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 100V 120A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 2.3mOhm @ 100A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 270µA Supplier Device Package: PG-TO220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 15600 pF @ 50 V |
Produkt ist nicht verfügbar |
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IPP023N10N5AKSA1 | Hersteller : Infineon Technologies |
MOSFETs N-Ch 100V 120A TO220-3 |
Produkt ist nicht verfügbar |