IPP027N08N5AKSA1 Infineon Technologies

Description: MOSFET N-CH 80V 120A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 2.7mOhm @ 100A, 10V, Power Dissipation (Max): 214W (Tc), Vgs(th) (Max) @ Id: 3.8V @ 154µA, Supplier Device Package: PG-TO220-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8970 pF @ 40 V.