IPP027N08N5AKSA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: MOSFET N-CH 80V 120A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 100A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 154µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8970 pF @ 40 V
auf Bestellung 70 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 70+ | 2.89 EUR |
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Technische Details IPP027N08N5AKSA1 Infineon Technologies
Description: MOSFET N-CH 80V 120A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 2.7mOhm @ 100A, 10V, Power Dissipation (Max): 214W (Tc), Vgs(th) (Max) @ Id: 3.8V @ 154µA, Supplier Device Package: PG-TO220-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8970 pF @ 40 V.
Weitere Produktangebote IPP027N08N5AKSA1 nach Preis ab 2.1 EUR bis 5.2 EUR
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IPP027N08N5AKSA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 80V 120A 3-Pin(3+Tab) TO-220 Tube |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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IPP027N08N5AKSA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 80V 120A 3-Pin(3+Tab) TO-220 Tube |
auf Bestellung 500 Stücke: Lieferzeit 14-21 Tag (e) |
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IPP027N08N5AKSA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 80V 120A 3-Pin(3+Tab) TO-220 Tube |
auf Bestellung 500 Stücke: Lieferzeit 14-21 Tag (e) |
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IPP027N08N5AKSA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 80V 120A Automotive 3-Pin(3+Tab) TO-220 Tube |
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IPP027N08N5AKSA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 80V 120A 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |
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IPP027N08N5AKSA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 80V 120A 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |
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IPP027N08N5AKSA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 80V 120A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 2.7mOhm @ 100A, 10V Power Dissipation (Max): 214W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 154µA Supplier Device Package: PG-TO220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8970 pF @ 40 V |
Produkt ist nicht verfügbar |
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IPP027N08N5AKSA1 | Hersteller : Infineon Technologies |
MOSFETs N-Ch 80V 120A TO220-3 |
Produkt ist nicht verfügbar |
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IPP027N08N5AKSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 214W; PG-TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 120A Power dissipation: 214W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 2.7mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Technology: OptiMOS™ 5 |
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