| Anzahl | Preis |
|---|---|
| 1+ | 11.83 EUR |
| 10+ | 8.59 EUR |
| 100+ | 7.3 EUR |
| 500+ | 6.21 EUR |
| 1000+ | 5.68 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IPP029N15NM6AKSA1 Infineon Technologies
Description: TRENCH >=100V, Input Capacitance (Ciss) (Max) @ Vds: 9900 pF @ 75 V, Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 10 V, Drain to Source Voltage (Vdss): 150 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 8V, 15V, Supplier Device Package: PG-TO220-3-1, Vgs(th) (Max) @ Id: 4V @ 276µA, Power Dissipation (Max): 3.8W (Ta), 395W (Tc), Rds On (Max) @ Id, Vgs: 2.8mOhm @ 100A, 15V, Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 197A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.
Weitere Produktangebote IPP029N15NM6AKSA1 nach Preis ab 8.95 EUR bis 14.26 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
IPP029N15NM6AKSA1 | Infineon Technologies |
 Description: TRENCH >=100VInput Capacitance (Ciss) (Max) @ Vds: 9900 pF @ 75 V Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 10 V Drain to Source Voltage (Vdss): 150 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 8V, 15V Supplier Device Package: PG-TO220-3-1 Vgs(th) (Max) @ Id: 4V @ 276µA Power Dissipation (Max): 3.8W (Ta), 395W (Tc) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 100A, 15V Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 197A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
auf Bestellung 1468 Stücke: Lieferzeit 10-14 Tag (e) |
|
| IPP029N15NM6AKSA1 |
|
Hersteller: Infineon Technologies
Description: TRENCH >=100V
Input Capacitance (Ciss) (Max) @ Vds: 9900 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Supplier Device Package: PG-TO220-3-1
Vgs(th) (Max) @ Id: 4V @ 276µA
Power Dissipation (Max): 3.8W (Ta), 395W (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 100A, 15V
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 197A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: TRENCH >=100V
Input Capacitance (Ciss) (Max) @ Vds: 9900 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Supplier Device Package: PG-TO220-3-1
Vgs(th) (Max) @ Id: 4V @ 276µA
Power Dissipation (Max): 3.8W (Ta), 395W (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 100A, 15V
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 197A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
auf Bestellung 1468 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 14.26 EUR |
| 50+ | 11.38 EUR |
| 100+ | 9.7 EUR |
| 500+ | 8.95 EUR |