auf Bestellung 1858 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 13.68 EUR |
| 10+ | 10.91 EUR |
| 25+ | 9.87 EUR |
| 100+ | 8.75 EUR |
| 250+ | 8.69 EUR |
| 500+ | 7.37 EUR |
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Technische Details IPP029N15NM6AKSA1 Infineon Technologies
Description: TRENCH >=100V, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 197A (Tc), Rds On (Max) @ Id, Vgs: 2.8mOhm @ 100A, 15V, Power Dissipation (Max): 3.8W (Ta), 395W (Tc), Vgs(th) (Max) @ Id: 4V @ 276µA, Supplier Device Package: PG-TO220-3-1, Drive Voltage (Max Rds On, Min Rds On): 8V, 15V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 9900 pF @ 75 V.
Weitere Produktangebote IPP029N15NM6AKSA1 nach Preis ab 8.95 EUR bis 14.26 EUR
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IPP029N15NM6AKSA1 | Hersteller : Infineon Technologies |
 Description: TRENCH >=100VPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 197A (Tc) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 100A, 15V Power Dissipation (Max): 3.8W (Ta), 395W (Tc) Vgs(th) (Max) @ Id: 4V @ 276µA Supplier Device Package: PG-TO220-3-1 Drive Voltage (Max Rds On, Min Rds On): 8V, 15V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9900 pF @ 75 V |
auf Bestellung 1468 Stücke: Lieferzeit 10-14 Tag (e) |
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