IPP030N10N3GXKSA1 INFINEON TECHNOLOGIES
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 300W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 300W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 300W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 300W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 34 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
12+ | 6.19 EUR |
13+ | 5.56 EUR |
14+ | 5.38 EUR |
15+ | 5.08 EUR |
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Technische Details IPP030N10N3GXKSA1 INFINEON TECHNOLOGIES
Description: MOSFET N-CH 100V 100A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 3mOhm @ 100A, 10V, Power Dissipation (Max): 300W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 275µA, Supplier Device Package: PG-TO220-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 14800 pF @ 50 V.
Weitere Produktangebote IPP030N10N3GXKSA1 nach Preis ab 3.42 EUR bis 10.74 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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IPP030N10N3GXKSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 300W; PG-TO220-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 100V Drain current: 100A Power dissipation: 300W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 3mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 34 Stücke: Lieferzeit 7-14 Tag (e) |
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IPP030N10N3GXKSA1 | Hersteller : Infineon Technologies | Trans MOSFET N-CH 100V 100A 3-Pin(3+Tab) TO-220 Tube |
auf Bestellung 549 Stücke: Lieferzeit 14-21 Tag (e) |
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IPP030N10N3GXKSA1 | Hersteller : Infineon Technologies | Trans MOSFET N-CH 100V 100A 3-Pin(3+Tab) TO-220 Tube |
auf Bestellung 550 Stücke: Lieferzeit 14-21 Tag (e) |
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IPP030N10N3GXKSA1 | Hersteller : Infineon Technologies | MOSFET N-Ch 100V 100A TO220-3 |
auf Bestellung 500 Stücke: Lieferzeit 136-140 Tag (e) |
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IPP030N10N3GXKSA1 | Hersteller : Infineon Technologies | Trans MOSFET N-CH 100V 100A 3-Pin(3+Tab) TO-220 Tube |
auf Bestellung 2976 Stücke: Lieferzeit 14-21 Tag (e) |
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IPP030N10N3GXKSA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 100V 100A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 100A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 275µA Supplier Device Package: PG-TO220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14800 pF @ 50 V |
auf Bestellung 1748 Stücke: Lieferzeit 10-14 Tag (e) |
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IPP030N10N3GXKSA1 | Hersteller : INFINEON |
Description: INFINEON - IPP030N10N3GXKSA1 - Leistungs-MOSFET, n-Kanal, 100 V, 100 A, 0.0026 ohm, TO-220, Durchsteckmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 100A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.7V euEccn: NLR Verlustleistung: 300W Anzahl der Pins: 3Pins productTraceability: Yes-Date/Lot Code Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0026ohm |
auf Bestellung 497 Stücke: Lieferzeit 14-21 Tag (e) |
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IPP030N10N3GXKSA1 | Hersteller : Infineon Technologies | Trans MOSFET N-CH 100V 100A Automotive 3-Pin(3+Tab) TO-220 Tube |
auf Bestellung 550 Stücke: Lieferzeit 14-21 Tag (e) |
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IPP030N10N3GXKSA1 | Hersteller : Infineon Technologies | Trans MOSFET N-CH 100V 100A 3-Pin(3+Tab) TO-220 Tube |
auf Bestellung 10 Stücke: Lieferzeit 14-21 Tag (e) |
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IPP030N10N3GXKSA1 | Hersteller : Infineon Technologies | Trans MOSFET N-CH 100V 100A 3-Pin(3+Tab) TO-220 Tube |
auf Bestellung 10 Stücke: Lieferzeit 14-21 Tag (e) |