Weitere Produktangebote IPP032N06N3GXKSA1 nach Preis ab 1.34 EUR bis 4.82 EUR
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IPP032N06N3GXKSA1 | INFINEON TECHNOLOGIES |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 120A; 188W; PG-TO220-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 60V Drain current: 120A Power dissipation: 188W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 3.2mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement |
auf Bestellung 53 Stücke: Lieferzeit 14-21 Tag (e) |
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IPP032N06N3GXKSA1 | Infineon |
Trans MOSFET N-CH 60V 120A 3-Pin(3+Tab) TO-220 Tube IPP032N06N3GXKSA1 IPP032N06N3G TIPP032n06n3g Anzahl je Verpackung: 10 Stücke |
auf Bestellung 240 Stücke: Lieferzeit 7-14 Tag (e) |
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IPP032N06N3GXKSA1 | Infineon Technologies |
MOSFETs N-Ch 60V 120A TO220-3 |
auf Bestellung 72 Stücke: Lieferzeit 10-14 Tag (e) |
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IPP032N06N3GXKSA1 | Infineon Technologies |
Description: MOSFET N-CH 60V 120A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 3.2mOhm @ 100A, 10V Power Dissipation (Max): 188W (Tc) Vgs(th) (Max) @ Id: 4V @ 118µA Supplier Device Package: PG-TO220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 30 V |
auf Bestellung 87 Stücke: Lieferzeit 10-14 Tag (e) |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 188W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Power dissipation: 188W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.2mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 188W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Power dissipation: 188W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.2mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 53 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 25+ | 2.95 EUR |
| 48+ | 1.52 EUR |
| 53+ | 1.34 EUR |
| IPP032N06N3GXKSA1 |
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Hersteller: Infineon
Trans MOSFET N-CH 60V 120A 3-Pin(3+Tab) TO-220 Tube IPP032N06N3GXKSA1 IPP032N06N3G TIPP032n06n3g
Anzahl je Verpackung: 10 Stücke
Trans MOSFET N-CH 60V 120A 3-Pin(3+Tab) TO-220 Tube IPP032N06N3GXKSA1 IPP032N06N3G TIPP032n06n3g
Anzahl je Verpackung: 10 Stücke
auf Bestellung 240 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 10+ | 3 EUR |
| IPP032N06N3GXKSA1 |
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Hersteller: Infineon Technologies
MOSFETs N-Ch 60V 120A TO220-3
MOSFETs N-Ch 60V 120A TO220-3
auf Bestellung 72 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 4.42 EUR |
| 10+ | 2.2 EUR |
| 100+ | 1.99 EUR |
| 500+ | 1.59 EUR |
| IPP032N06N3GXKSA1 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 120A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 100A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 4V @ 118µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 30 V
Description: MOSFET N-CH 60V 120A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 100A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 4V @ 118µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 30 V
auf Bestellung 87 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 4.82 EUR |
| 50+ | 2.39 EUR |