IPP037N06L3GHKSA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: MOSFET N-CH 60V 90A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 90A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 93µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 30 V
Produkt ist nicht verfügbar
Produktrezensionen
Produktbewertung abgeben
Technische Details IPP037N06L3GHKSA1 Infineon Technologies
Description: MOSFET N-CH 60V 90A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 90A (Tc), Rds On (Max) @ Id, Vgs: 3.7mOhm @ 90A, 10V, Power Dissipation (Max): 167W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 93µA, Supplier Device Package: PG-TO220-3-1, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 30 V.
Weitere Produktangebote IPP037N06L3GHKSA1
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
|
IPP037N06L3GHKSA1 | Hersteller : Infineon Technologies |
MOSFET N-Ch 60V 90A TO220-3 |
Produkt ist nicht verfügbar |
