IPP038N15NM6AKSA1 Infineon Technologies
Hersteller: Infineon TechnologiesMOSFETs OptiMOS 6 power MOSFET 150 V normal level in TO-220 package
auf Bestellung 1169 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 7.81 EUR |
| 10+ | 5.72 EUR |
| 100+ | 4.72 EUR |
| 500+ | 4 EUR |
| 1000+ | 3.52 EUR |
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Technische Details IPP038N15NM6AKSA1 Infineon Technologies
Description: TRENCH >=100V, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 178A (Tc), Rds On (Max) @ Id, Vgs: 3.6mOhm @ 76A, 15V, Power Dissipation (Max): 3.8W (Ta), 294W (Tc), Vgs(th) (Max) @ Id: 4V @ 179µA, Supplier Device Package: PG-TO220-3-1, Drive Voltage (Max Rds On, Min Rds On): 8V, 15V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6400 pF @ 75 V.
Weitere Produktangebote IPP038N15NM6AKSA1 nach Preis ab 4.42 EUR bis 9.24 EUR
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IPP038N15NM6AKSA1 | Hersteller : Infineon Technologies |
Description: TRENCH >=100V Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 178A (Tc) Rds On (Max) @ Id, Vgs: 3.6mOhm @ 76A, 15V Power Dissipation (Max): 3.8W (Ta), 294W (Tc) Vgs(th) (Max) @ Id: 4V @ 179µA Supplier Device Package: PG-TO220-3-1 Drive Voltage (Max Rds On, Min Rds On): 8V, 15V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6400 pF @ 75 V |
auf Bestellung 178 Stücke: Lieferzeit 10-14 Tag (e) |
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